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Year	Authors	Title	Reference Location	Type of Publication
2011	Gao Z, Carabelli V, Carbone E, Colombo E, Dipalo M, Manfredotti Ch, Pasquarelli A, Feneberg M, Thonke K, Vittone E, Kohn E	Transparent microelectrode array in diamond technology	J Micro-Nano Mech 6 (2011) 33-37	Journal
2011	Westenfelder B, Meyer JC, Biskupek J, Algara-Siller G, Lecher LG, Kusterer J, Kaiser U, Krill III CE, Kohn E, Scholz F	Graphene-based sample supports for in situ high-resolution TEM electrical investigations	J Phys D: Appl Phys 44 (2011) 055502	Journal
2011	Pasquarelli A, Carabelli V, Xu Y, Colombo E, Gao Z, Scharpf J, Carbone E, Kohn E	Diamond microelectrodes arrays for the detection of secretory cell activity	Intern J Environ Anal Chem 91 (2011) 150-160	Journal
2011	Grass E, Schumacher H and Ziegler V	EuMA special issue on 60 GHz communication systems (Guest Editorial)	Int J Microw Wirel Technol 3 (2011) 87-88	Journal
2011	Ulusoy AC, Liu G, Trasser A and Schumacher H	Hardware efficient receiver for low-cost ultra-high rate 60 GHz wireless communications	Int J Microw Wirel Technol 3 (2011) 121-129	Journal
2011	Schulte B, Peter M, Felbecker R, Keusgen W, Steffen R, Schumacher H, Hellfeld M, Barghouthi A, Krone S, Guderian F, Fettweis GP, Ziegler V	60 GHz WLAN applications and implementation aspects	Int J Microw Wirel Technol 3 (2011) 213-221	Journal
2011	Ulusoy AC, Schleicher B, Schumacher H	A tunable differential all-pass filter for UWB true time delay and phase shift applications	IEEE Microw Wireless Compon Lett 21 (2011) 462-464	Journal
2011	Su Y, Liu G, Trasser A, Schumacher H	U- and V-band Signal Sources in Si/SiGe Technology (Poster Presentation)	IEEE Semiconductor Conference Dresden (SCD 2011), Dresden, Germany, Sept 27-28, 2011	Proceedings
2011	Bromberger, Christoph	Bauelemententwicklung am Beispiel von SiGe	University of Ulm, 2011, PhD Thesis	Thesis
2011	Hosch, Michael	Analysis and Optimization of AlGaN/GaN High Electron Mobility Transistors for Microwave Applications	University of Ulm, 2011, PhD Thesis	Thesis
2011	Schleicher, Bernd	Impulse-Radio Ultra-Wideband Systems for Vital-Sign Monitoring and Short-Range Communications	University of Ulm, 2011, PhD Thesis	Thesis
2010	Ulusoy AC, Liu G, Trasser A, Schumacher H	A SiGe frequency quadrupler for M-QAM carrier recovery	Proc IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF 2010), New Orleans, USA, Jan 11-13, 2010, pp 17-20	Proceedings
2010	Pietzka C, Denisenko A, Dipalo M, Kohn E	Nano-crystalline diamond electrodes with cap layer decorated by gold particles	Diamond Relat Mater 19 (2010) 56-61	Journal
2010	Pietzka C, Denisenko A, Romanyuk A, Schäfer PJ, Kibler LA, Scharpf J, Kohn E	Electronic surface barrier properties of boron-doped diamond oxidized by plasma treatment	Diamond Relat Mater 19 (2010) 213-216	Journal
2010	Denisenko A, Pietzka C, Kibler LA, Kohn E	Lateral depletion of contact to metallic nanoparticles on boron-doped diamond electrodes	Journal of the Electrochemical Society 157 (2010) H342-H348	Journal
2010	Schleicher B, Ulusoy CA, Schumacher H	A biphase modulator circuit for impuse radio-UWB applications	IEEE Microw Wireless Compon Lett 20 (2010) 115-117	Journal
2010	Schleicher B and Schumacher H	Impulse generator targeting the European UWB mask	Proc 10th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF 2010), New Orleans, LA, USA, Jan 11-13, 2010, pp 21-24	Proceedings
2010	Salvadori MC, Araújo WWR, Teixeira FS, Cattani M, Pasquarelli A, Oks EM, Brown IG	Termination of diamond surfaces with hydrogen, oxygen and fluorine using a small, simple plasma gun	Diamond Relat Mater 19 (2010) 324-328	Journal
2010	Speranza G, Torrengo S, Filippi M, Minati L, Vittone E, Pasquarelli A, Dipalo M, Kohn E	In situ thermal treatment of UV-oxidized diamond hydrogenated surface	Surface Science 604 (2010) 753-761	Journal
2010	Silva F, Bonnin X, Scharpf J, Pasquarelli A	Microwave analysis of PACVD diamond deposition reactor based on electromagnetic modelling	Diamond Relat Mater 19 (2010) 397-403	Journal
2010	Klauser F, Hermann M, Steinmüller-Nethl D, Eiter O, Pasquarelli A, Bertel E, Seppi Th, Lukas P, Lechleitner Th	Direct and protein-mediated cell attachment on differently terminated nanocrystalline diamond	Chemical Vapor Deposition 16 (2010) 42-49	Journal
2010	Alomari M, Chuvilin A, Toth L, Pecz B, Carlin J-F, Grandjean N, Gaquière C, di Forte-Poisson M-A, Delage S, Kohn E	Thermal oxidation of lattice matched InAlN/GaN heterostructures	Phys Status Solidi C 7 (2010) 13-16	Journal
2010	Ulusoy AC, Liu G, Feger T, Trasser A, Schumacher H	A narrow bandwidth microstrip bandpass filter suitable for system-on-package integration	Proc 10th Mediterranean Microwave Symposium (MMS 2010), Güzelyurt, Cyprus, Aug 25-27, 2010, pp 216-219	Proceedings
2010	Liu G, Trasser A, Schumacher H	33-43 GHz and 66-86 GHz VCO with high output power in an 80 GHz fT SiGe HBT technology	IEEE Microw Wireless Compon Lett 20 (2010) 557-559	Journal
2010	Ulusoy AC, Liu G, Peter M, Felbecker R, Abdine HA, Schumacher H	A BPSK/QPSK receiver architecture suitable for low-cost ultra-high rate 60 GHz wireless communications	Proc European Microwave Conference (EuMIC) 2010, Paris, France, Sept 28-30, 2010, pp 381-384	Proceedings
2010	Schleicher B, Ahmed S, Trasser A, Schumacher H	Multi-user capabilities of an FM IR-UWB system	Proc IEEE Internat Conf on Wireless Information Technol and Systems (ICWITS 2010), Honolulu, HI, USA, Aug 28-Sept 3, 2010, pp 1-4	Proceedings
2010	Schleicher B, Leib M, Menzel W, Schumacher H	Beam steerable IR-UWB antenna array with FCC-compliant impulse generators	Electronics Letters 46 (2010) 1245-1246	Journal
2010	Lin D, Schleicher B, Trasser A, Schumacher H	A Highly Compact SiGe HBT Differential LNA for 3.1-10.6 GHz Ultra-Wideband Applications	Proc 2010 IEEE Internat Conf on Ultra-Wideband (ICUWB 2010), Nanjing, P.R.China, Sept 20-23, 2010	Proceedings
2010	Lin D, Schleicher B, Trasser A, Schumacher H	A SiGe HBT Low-Power Pulse Generator for Impulse Radio Ultra-wide Band Applications	Proc 2010 IEEE Internat Conf on Ultra-Wideband (ICUWB 2010), Nanjing, P.R.China, Sept 20-23, 2010	Proceedings
2010	Su Y, Liu G, Schumacher H	Limiting Amplifiers for Bits Recovery of Gbps Analog BPSK/QPSK Demodulator	Proc 2010 PhD Research In Microelectronics and Electronics (PRIME 2010), Berlin, Germany, July 19-21, 2010	Proceedings
2010	Liu G, Su Y, Schumacher H	A SiGe 7 Gbit/s Analog BPSK/QPSK Demodulator	Proc 2010 PhD Research In Microelectronics and Electronics (PRIME 2010), Berlin, Germany, July 19-21, 2010	Proceedings
2010	Schrade-Köhn D, Leber P, Behtash R, Blanck H, Schumacher H	Change of material properties of Ni, Pt and Au thin films and thin film stacks for GaN Schottky contacts during thermal processing	Semicond Sci Technol 25 (2010) 095009	Journal
2010	Schrade-Köhn D, Leber P, Behtash R, Blanck H, Schumacher H	Sub half micron structures with profile control on compound semiconductor substrates based on conventional i-line lithography	Proc Internat Conf on Compound Semiconductor Manufacturing Technology (CS MANTECH) 2010, Portland, OR, USA, May 17-20, 2010, pp 319-322	Proceedings
2010	Gruson, Frank	High-linearity receivers for mobile communication applications using SiGe technology	University of Ulm, 2010, PhD Thesis	Thesis
2010	Pietzka, Carsten	Characterization of Oxygen-terminated Diamond Electrodes for Electrochemical Applications	University of Ulm, 2010, PhD Thesis	Thesis
2010	Gai X, Liu G, Chartier S, Trasser A, Schumacher H	A PLL with Ultra Low Phase Noise for Millimeter Wave Applications	Proc 40th European Microwave Conference (EuMC 2010), Paris, France, Sept 28-30, 2010, pp 69-72	Proceedings
2010	Gao Z, Carabelli V, Carbone E, Colombo E, Demaria F, Dipalo M, Gosso S, Manfredotti Ch, Pasquarelli A, Rossi S, Xu Y, Vittone E, Kohn E	Transparent diamond microelectrodes for biochemical application	Diamond Relat Mater 19 (2010) 1021-1026	Journal
2010	Maier D, Alomari M, Grandjean N, Carlin J-F, di Forte-Poisson M-A, Dua Ch, Chuvilin A, Troadec D, Gaquière Ch, Kaiser U, Delage SL, Kohn E	Testing the Temperature Limits of GaN-Based HEMT Devices	IEEE Transactions on Device and Materials Reliability 10 (2010) 427-436	Journal
2010	Maier D, Alomari M, Kohn E, Diforte-Poisson M-A, Dua Ch, Delage SL, Grandjean N, Carlin J-F, Chuvilin A, Kaiser U, Troadec D, Gaquière Ch	High Temperature Stability of Nitride-Based Power HEMTs	Proc 18th Internat Conf on Microwave, Radar and Wireless Communications (MIKON 2010), Vilnius, Lithuania, June 14-16, 2010, pp 1-4	Proceedings
2010	Mohannad, Omar	Design of a Variable Gain Amplifier for Automatic Gain Control for Ultra High Rate Communication Systems	University of Ulm, 2010, Master Thesis	Thesis
2010	Chatterjee, Debalina	Integrated BiCMOS/RFMEMS components for a reconfigurable 60 GHz up-/down-converter	University of Ulm, 2010, Master Thesis	Thesis
2010	Qureshi, Muhammad Ayyaz	Electromechanical and RF Optimization of RF-MEMS Components in a Metamorphic HEMT Technology	University of Ulm, 2010, Master Thesis	Thesis
2010	Alam, Mohammad Zakir	RFMEMS Component Optimization and Circuit Prototypes in a Si/SiGe BiCMOS Technology	University of Ulm, 2010, Master Thesis	Thesis
2010	Ahmed, Shamsuddin	Investigation of performance improvement measures for FM IR-UWB	University of Ulm, 2010, Master Thesis	Thesis
2010	Mahendar, Sapati	LNAs for impulse radio ultrawideband (ECC MASK) using SiGe and GaAs technologies	University of Ulm, 2010, Master Thesis	Thesis
2010	Schmidt, Andrej	Untersuchung zu Aluminiumoxid- und Aluminiumnitridschichten auf Silizium und Diamant, abgeschieden mittels Atomic Layer Deposition	University of Ulm, 2010, Master Thesis	Thesis
2010	Nasr, Ismail	Monolithic differential impulse generators for IR-UWB	University of Ulm, 2010, Master Thesis	Thesis
2010	Liu, Wenfen	Design of a Sensitivity Time Control (STC) Unit Using 0.25 µm SiGe-BiCMOS Technology	University of Ulm, 2010, Master Thesis	Thesis
2010	Hugger, Alexander	Elektrochemische Untersuchungen an bordotierten Diamantschichten in FET- und Elektrodenkonguration	University of Ulm, 2010, Student Thesis	Thesis
2010	Marcantoni A, Rojo-Ruiz J, Gosso S, Pasquarelli A, Carabelli V, Carbone E	A MEA-based Assay of Adrenal Chromaffin Cells Spontaneous Firing Using Ion Channel Blockers	Proc 7th Int Meeting on Substrate-Integrated Microelectrode Arrays, Reutlingen, Germany, June 29 - July 2, 2010, pp 161-162	Proceedings
2010	Colombo E, Pietzka C, Carabelli V, Gao Z, Herfurth P, Men Y, Schneider M, Carbone E, Kohn E, Pasquarelli A	Transparent NCD microelectrode array for spatially resolved detection in micro-areas of single cells	Proc 7th Int Meeting of Substrate-Integrated Microelectrode Arrays, Reutlingen, Germany, June 29 - July 2, 2010, pp 261-262	Proceedings
2010	Gosso S, Marcantoni A, Xu Y, Colombo E, Gao Z, Kohn E, Pasquarelli A, Carbone E, Carabelli V	High-resolution amperometric spikes from chromaffin cells revealed by boron-doped nanocrystalline diamond microelectrode arrays	Proc 7th Int Meeting on Substrate-Integrated Microelectrode Arrays, Reutlingen, Germany, June 29 - July 2, 2010, pp 295-296	Proceedings
2010	Carabelli V, Gosso S, Marcantoni A, Xu Y, Colombo E, Gao Z, Vittone E, Kohn E, Pasquarelli A, Carbone E	Nanocrystalline diamond microelectrode arrays fabricated on sapphire technology for high-time resolution of quantal catecholamine secretion from chromaffin cells	Biosensors and Bioelectronics 26 (2010) 92-98	Journal
2010	Alomari M, Dussaigne A, Martin D, Grandjean N, Gaquière C, Kohn E	AlGaN/GaN HEMT on (111) single crystalline diamond	Electronics Letters 46 (2010) 299-301	Journal
2009	Su, Yinmei	Investigation of a GHz Bandwidth I/Q Demodulator	University of Ulm, 2009, Master Thesis	Thesis
2009	Leib M, Schmitt E, Gronau A, Dederer J, Schleicher B, Schumacher H, Menzel W	A Compact Ultra-wideband Radar for Medical Applications	Frequenz 63 (2009) 2-8	Journal
2009	Liu G, Chartier S, Trasser A, Schumacher H	Fully Integrated Millimeter-Wave VCO with 32% Tuning Range	Proc IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF) 2009, San Diego, CA, USA, Jan 19-21, 2009, pp 1-4	Proceedings
2009	Schick C, Feger T, Schumacher H	40 Gbit/s differential distributed modulator driver realised in 80 GHz SiGe HBT process	Electronics Letters 45 (2009) 408-409	Journal
2009	Schleicher B, Dederer J, Schumacher H	Si/SiGe HBT UWB impulse generators with sleep-mode targeting the FCC masks	Proc IEEE Internat Conf on Ultra-Wideband (ICUWB) 2009, Vancouver/Canada, Sept 9-11, 2009, pp 674-678	Proceedings
2009	Schleicher B, Ghaleb H, Trasser A, Schumacher H	FM over impulse radio UWB	Proc IEEE Internat Conf on Ultra-Wideband (ICUWB) 2009, Vancouver/Canada, Sept 9-11, 2009, pp 200-204	Proceedings
2009	Prasad S, Schumacher H, Gopinath A	High-Speed Electronics and Optoelectronics: Devices and Circuits	Cambridge University Press, Cambridge, UK 2009, ISBN 978-0-521-86283-7	Book (Chapter in Book)
2009	Dipalo M, Gao Z, Scharpf J, Pietzka C, Alomari M, Medjdoub F, Carlin JF, Grandjean N, Delage S, Kohn E	Combining diamond electrodes with GaN heterostructures for harsh environment ISFETs	Diamond Relat Mater 18 (2009) 884-889	Journal
2009	Denisenko A, Pietzka C, Chuvilin A, Kaiser U, Lu H, Schaff WJ, Kohn E	Depletion of surface accumulation charge in InN by anodic oxidation	J Appl Phys 105 (2009) 033702-1 - 033702-7	Journal
2009	Pietzka C, Denisenko A, Kibler LA, Scharpf J, Men Y, Kohn E	Surface modification of single-crystal boron-doped diamond electrodes for low background current	Diamond Relat Mater 18 (2009) 816-819	Journal
2009	Feger T, Purtova T, Lisec Th, Schumacher H	A 35 GHz single-pole-double-throw using optimised shunt capacitive RF-MEMS switches	Proc 10th Internat Symp on RF MEMS and RF Microsystems (MEMSWAVE) 2009, Trento, IT, July 6-8, 2009, pp	Proceedings
2009	Liu G, Schleicher B, Purtova T, Schumacher H	Fully integrated millimeter-wave VCO using slow-wave thin-film microstrip lines for chip size reduction	Proc 4th European Microwave Integrated Circuits Conference (EuMIC) 2009, Rome, IT, Sept 28-29, 2009, pp 116-119	Proceedings
2009	Kueck D, Jooss S, Kohn E	Technology of passivated surface channel MESFETs with modified gate structures	Diamond Relat Mater 18 (2009) 1306-1309	Journal
2009	Hosch M, Pomeroy JW, Sarua A, Kuball M, Jung H, Schumacher H	Field dependent self-heating effects in high-power AlGaN/GaN HEMTs	Proc 24th CS MANTECH Conf, Tampa, FL, USA, May 18-21, 2009, pp 139-141	Proceedings
2009	Hosch M, Lohmiller P, Trasser A, Schumacher H	Characterization of gm-dispersion and its impact on linearity of AlGaN/GaN HEMTs for microwave applications	Proc 4th European Microwave Integrated Circuits (EuMIC) Conf, Rome, Italy, Sept 28-29, 2009, pp 105-107	Proceedings
2009	Hosch M, Behtash R, Thorpe JR, Blanck H, Riepe KJ, Schumacher H	Gate leakage in AlGaN/GaN HEMTs utilizing a dielectric assisted gate process - A simulation study	18th Europ Workshop on Heterostructure Technology (HETECH 2009), Günzburg, Germany, Nov 2-4, 2009, Book of Abstracts, pp 111-113	Proceedings
2009	Thiasiriphet Th, Leib M, Lin D, Schleicher B, Lindner J, Menzel W, Schumacher H	Investigations on a comb filter approach for IR-UWB systems	Frequenz 63 (2009) 179-182	Journal
2009	Feuerlein S, Klass O, Pasquarelli A, Brambs HJ, Wunderlich A, Duerk JL, Aschoff AJ, Hoffmann MHK	Coronary MR imaging: Navigator echo biofeedback increases navigator efficiency-initial experience	Acad Radiol 16 (2009) 374-379	Journal
2009	Torrengo S, Minati L, Filippi M, Miotello A, Ferrari M, Chiasera A, Vittone E, Pasquarelli A, Dipalo M, Kohn E, Speranza G	XPS and UPS investigation of the diamond surface oxidation by UV irradiation	Diamond Relat Mater 18 (2009) 804-807	Journal
2009	Duailibi SE, Duailibi MT, Ferreira LM, Salvadori MC, Teixeira FS, Pasquarelli A, Vacanti JP, Yelick PC	Microscopic analysis of hDSC on nanocrystalline diamond films (abstract)	87th General Session & Exhibition of the Int Assoc for Dental Research, Miami, FL, USA, April 1-4, 2009, Abstract Book, p 172	Proceedings
2009	Pasquarelli A, Carabelli V, Xu Y, Gao Z, Marcantoni A, Kohn E, Carbone E	Diamond microelectrodes for amperometric detection of secretory cells activity	Proc World Congress on Medical Physics and Biomedical Engineering, Munich, Germany, Sept 7-12, 2009, pp 208-211	Proceedings
2009	Alomari M, Dipalo M, Carlin J-F, Grandjean N, Diforte-Poisson M-A, Delage SL, Kohn E	Diamond on GaN for High Power Applications	18th Europ Workshop on Heterostructure Technology (HETECH 2009), Günzburg, Germany, Nov 2-4, 2009, Book of Abstracts, pp 35-36	Proceedings
2009	Alomari M, Medjdoub F, Carlin J-F, Feltin E, Grandjean N, Chuvilin A, Kaiser U, Gaquière C, Kohn E	InAlN/GaN MOSHEMT with self-aligned thermally generated oxide recess	Electron Device Letters 30 (2009) 1131-1133	Journal
2009	Maier D, Alomari M, Grandjean N, Carlin J-F, Diforte-Poisson M-A, Dua C, Delage S, Kohn E	High temperature operation of InAlN/GaN HEMTs	18th Europ Workshop on Heterostructure Technology (HETECH 2009), Günzburg, Germany, Nov 2-4, 2009, Book of Abstracts, pp 31-32	Proceedings
2009	Colombo E, Carabelli V, Carbone E, Gao Z, Pasquarelli A, Xu Y, Kohn E	Transparent diamond chip on sapphire for cell analysis	18th Europ Workshop on Heterostructure Technology (HETECH 2009), Günzburg, Germany, Nov 2-4, 2009, Book of Abstracts, pp 57-58	Proceedings
2009	Kueck D, Schmidt A, Scharpf J, Ebert W, Kohn E	Recent progress in the understanding of the H-terminated diamond surface	18th Europ Workshop on Heterostructure Technology (HETECH 2009), Günzburg, Germany, Nov 2-4, 2009, Book of Abstracts, pp 61-62	Proceedings
2009	Benkart P, Heinle U, Daumiller I, Kunze M, Sönmez E	MEMS in GaN	18th Europ Workshop on Heterostructure Technology (HETECH 2009), Günzburg, Germany, Nov 2-4, 2009, Book of Abstracts, pp 79-80	Proceedings
2009	Chartier, Sébastien	SiGe HBT ICs with high operational to transit frequency ratio: Design and design re-use	University of Ulm, 2009, PhD Thesis	Thesis
2009	Dederer, Jochen	Si/SiGe HBT ICs for impulse Ultra-Wideband (I-UWB) communications and sensing	University of Ulm, 2009, PhD Thesis	Thesis
2009	Dipalo, Michele	Nanocrystalline diamond growth and device applications	University of Ulm, 2009, PhD Thesis	Thesis
2009	Grünenpütt, Jan Erik	Pseudomorphic and metamorphic HEMT-technologies for industrial W-band low-noise and power applications	University of Ulm, 2009, PhD Thesis	Thesis
2009	Häfele, Martin	High-speed wideband GaAs PHEMT amplifiers for 40 Gb/s fiber-optic communication systems	University of Ulm, 2009, PhD Thesis	Thesis
2009	Hajj, Hayssam El-	Growth and characterization of diamond delta-doped layers for FET applications	University of Ulm, 2009, PhD Thesis	Thesis
2009	Kusterer, Joachim	Technologie von MEMS-Elementen auf der Basis nanokristalliner Diamantschichten für eine hybride Integration	University of Ulm, 2009, PhD Thesis	Thesis
2009	Fang, Zhen	Modification of the nanocrystalline diamond surface termination by UV irradiation under selected gaseous and liquid conditions	University of Ulm, 2009, Master Thesis	Thesis
2009	Alomari M, Chuvilin A, Carlin J-F, Grandjean N, Gaquière C, Kaiser U, Kohn E	Thermal oxidation of lattice matched InAlN/GaN heterostructures (Abstract)	Proc E-MRS 2009 Spring Meeting, Strasbourg, France, June 8-12, 2009, p JOT-7074	Proceedings
2009	Alomari M, Maier D, Carlin J-F, Grandjean N, Diforte-Poisson M-A, Delage S, Kohn E	Au free ohmic contacts for high temperature InAlN/GaN HEMTs	Proc 216th ECS Meeting 2009, Vienna, Austria, Oct 4-9, 2009, p 2022	Proceedings
2008	Schleicher B, Chartier S, Fischer G, Korndörfer F, Borngräber J, Feger T, Schumacher H	A compact low-power SiGe:C BiCMOS amplifier for 77-81 GHz automotive radar	Proc 2008 IEEE Topical Meeting on Silicon Monolithic ICs in RF Systems (SiRF), Orlando, FL, USA, January 23-25, 2008, pp 195-198	Proceedings
2008	Denisenko A, Pietzka C, Romanyuk A, El-Hajj H, Kohn E	The electronic surface barrier of boron-doped diamond by anodic oxidation	Journal of Applied Physics 103 (2008) 014904-1 - 014904-8	Journal
2008	Pasquarelli A	Biochips: Technologies and applications	Materials Science and Engineering C 28 (2008) 495-508	Journal
2008	Kueck D, El-Hajj H, Kaiser A, Kohn E	Surface-channel MESFET with boron-doped contact layer	Diamond Relat Mater 17 (2008) 732-735	Journal
2008	Schleicher B, Dederer J, Leib M, Nasr I, Trasser A, Menzel W, Schumacher H	Highly Compact Impulse UWB Transmitter for High-Resolution Movement Detection	Proc 2008 IEEE Internat Conf on Ultra-Wideband (ICUWB 2008), Hannover, Germany, September 10-12, 2008, vol. 1, pp 89-92	Proceedings
2008	Dederer J, Schleicher B, Trasser A, Feger T, Schumacher H	A Fully Monolithic 3.1-10.6 GHz UWB Si/SiGe HBT Impulse-UWB Correlation Receiver	Proc 2008 IEEE Internat Conf on Ultra-Wideband (ICUWB 2008), Hannover, Germany, September 10-12, 2008, vol. 1, pp 33-36	Proceedings
2008	Kusterer J, Lüker A, Herfurth P, Men Y, Ebert W, Kirby P, O'Keefe M, Kohn E	Piezo-actuated nanodiamond cantilever technology for high-speed applications	Diamond & Related Materials 17 (2008) 1429-1433	Journal
2008	Hosch M, Behtash R, Thorpe JR, Held S, Blanck H, Riepe K, Schumacher H	The Impact of Layout and Technology on the DC and RF Performance of AlGaN/GaN HFETs	Proc 20th Asia Pacific Microwave Conference, Hong Kong, P.R.China, December 16-19, 2008	Proceedings
2008	Lin, Dayang	Investigations on Differential Low-Noise Amplifiers and Active Filters for UWB Applications	University of Ulm, 2008, Master Thesis	Thesis
2008	Pietzka C, Denisenko A, Alomari M, Medjdoub F, Carlin JF, Feltin E, Grandjean N, Kohn E	Effect of Anodic Oxidation on the Characteristics of Lattice-Matched AlInN/GaN Heterostructures	Journal of Electronic Materials 37 (2008) 616-623	Journal
2008	Balachandran S, Kusterer J, Maier D, Dipalo M, Weller T, Kohn E	High power nanocrystalline diamond RF MEMS - A combined look at mechanical and microwave properties	Proc IEEE Internat Conf on Microwaves, Communications, Antennas and Electronic Systems (COMCAS 2008), Tel Aviv, Israel, May 13-14, 2008, pp 1-8	Proceedings
2008	Köhn, Dominik Manuel	Development of gate processes for GaN HEMTs	University of Ulm, 2008, Master Thesis	Thesis
2008	Speranza G, Torrengo S, Minati L, Filippi M, Castellino M, Manfredotti Cl, Manfredotti Ch, Dipalo M, Pasquarelli A, Kohn E, El-Hajj H, Vittone E	Characterization of UV irradiated nanocrystalline diamond	Diamond Relat Mater 17 (2008) 1194-1198	Journal
2008	Pasquarelli A, Dipalo M, Kohn E, Marcantoni A, Carabelli V, Carbone E	Planar NCD microelectrodes for detecting quantal release of catecholamines from chromaffin cells	Proc 6th Int Meeting on Substrate-Integrated Microelectrodes, Reutlingen, Germany, July 8-11, 2008, pp 333-334	Proceedings
2008	Medjdoub F, Alomari M, Carlin J-F, Gonschorek M, Feltin E, Py MA, Grandjean N, Kohn E	Barrier-layer scaling of InAlN/GaN HEMTs	Electron Device Letters 29 (2008) 422-425	Journal
2008	Medjdoub F, Alomari M, Carlin J-F, Gonschorek M, Feltin E, Py MA, Gaquière C, Grandjean N, Kohn E	Effect of fluoride plasma treatment on InAlN/GaN HEMTs	Electronics Letters 44 (2008) 696-698	Journal
2008	Medjdoub F, Alomari M, Carlin J-F, Gonschorek M, Feltin E, Py MA, Gaquière C, Grandjean N, Kohn E	Status of the emerging InAlN/GaN power HEMT technology	The Open Electrical and Electronic Engineering Journal 2 (2008) 1-7	Journal
2008	Benkart, Peter	3-Dimensional Chip Integration: Technology and Critical Issues	University of Ulm, 2008, PhD Thesis	Thesis
2008	Kubovic, Michal	Technology for diamond based electronics	University of Ulm, 2008, PhD Thesis	Thesis
2008	Siegel, Christian	Entwicklung und Charakterisierung einer zuverlässigen Technologie für Mikro- Elektro- Mechanische Systeme als Mikrowellenbauelemente	University of Ulm, 2008, PhD Thesis	Thesis
2008	Zimmermann, Tom	Polarisationseffekte in Gruppe-(III)-Nitriden und deren Anwendung in p-Kanal FETs und elektromechanischen Strukturen	University of Ulm, 2008, PhD Thesis	Thesis
2008	Jooß, Sebastian	Aufbau und Erprobung einer Atomic Layer Deposition Anlage zur Herstellung dünner Isolatorschichten	University of Ulm, 2008, Master Thesis	Thesis
2008	Leber, Philipp	Untersuchungen an per 'Atomic Layer Deposition' abgeschiedenen, dielektrischen Aluminiumnitrid-Schichten	University of Ulm, 2008, Student Thesis	Thesis
2008	Alomari M, Medjdoub F, Feger T, Schumacher H, Carlin J-F, Grandjean N, di Forte-Poisson M-A, Delage S, Giesen C, Heuken M, Gaquière C, Kohn E	InAlN/GaN MOS-HEMT with self-aligned thermally grown oxide	Proc 17th European Heterostructure Technology Workshop (HeTech 2008), Venice, Italy, Nov 2-5, 2008	Proceedings
2007	Dederer J, Schick C, Trasser A, Schumacher H	A SiGe impulse generator for single-band ultra-wideband applications	Semicond Sci Technol 22 (2007) S200-S203	Journal
2007	Öjefors E, Sönmez E, Chartier S, Lindberg P, Schick C, Rydberg A, Schumacher H	Monolithic integration of a folded dipole antenna with a 24-GHz receiver in SiGe HBT technology	IEEE Trans Microw Theory Tech 55 (2007) 1467-1475	Journal
2007	García González, Lidia	Simulation and measurements on diamond based diodes for the evaluation of the influence of defects on electrical parameters	University of Ulm, 2007, Master Thesis	Thesis
2007	Dennler, Philippe	An evaluation of time delay circuits for impulse UWB systems	University of Ulm, 2007, Master Thesis	Thesis
2007	Gai, Xiaolei	Investigation of low noise fast phase/frequency detector design	University of Ulm, 2007, Master Thesis	Thesis
2007	Chartier S, Sönmez E, Dederer J, Schleicher B, Schumacher H	Millimeter-wave Si/SiGe HBT frequency divider using dynamic and static division stages	Proc 19th Asia Pacific Microwave Conference, Bangkok, Thailand, December 11-14, 2007	Proceedings
2007	Chartier S, Liu L, Fischer G, Glisic S, Höhnemann H, Trasser A, Schumacher H	SiGe millimeter-wave dynamic frequency divider with enhanced sensitivity incorporating a transimpedance stage	Proc European Microwave Integrated Circuits Conference (EuMIC) 2007, Munich, October 8-10, 2007, pp 84-87	Proceedings
2007	Chartier S, Schleicher B, Korndörfer F, Glisic S, Fischer G, Schumacher H	A fully integrated fully differential low-noise amplifier for short range automotive radar using a SiGe:C BiCMOS technology	Proc European Microwave Integrated Circuits Conference (EuMIC 2007), Munich, October 8-10, 2007, pp 407-410	Proceedings
2007	Balachandran S, Kusterer J, Connick R, Weller TM, Maier D, Dipalo M, Kohn E	Thermally actuated nanocrystalline diamond micro-bridges for microwave and high power RF applications	Proc IEEE MTT-S International Microwave Symposium, Honolulu, Hawai, USA, June 3-8, 2007, pp 367-370	Proceedings
2007	Kusterer J, Balachandran S, Maier D, Dipalo M, Connick R, Weller TM, Kohn E	Nanodiamond microbridges for RF-applications	2nd International Industrial Diamond Conference, Rome, Italy, April 18-19, 2007	Proceedings
2007	Kusterer J, Kohn E, Lüker A, Kirby P, O'Keefe MF	Diamond high speed and high power MEMS switches	4th EMRS DTC Technical Conference, Edinburgh, UK, July 10-11, 2007	Proceedings
2007	Dederer J, Schleicher B, De Andrade Tabarani Santos F, Trasser A, Schumacher H	FCC compliant 3.1-10.6 GHz UWB pulse radar system using correlation detection	Proc International Microwave Symposium, Honolulu, Hawai, USA, June 3-8, 2007, pp 1471-1474	Proceedings
2007	Dederer J, Chartier S, Feger T, Spitzberg U, Trasser A, Schumacher H	Highly compact 3.1-10.6 GHz UWB LNA in SiGe HBT technology	Proc European Microwave Integrated Circuits Conference, Munich, Germany, October 8-10, 2007, pp 247-250	Proceedings
2007	Hernández F, Denisenko A, Kohn E	Nanoscale surface modification of diamond for enhanced electrochemical sensing: Electrochemical characteristics of the surface modification	Diamond & Related Materials 16 (2007) 867-871	Journal
2007	Schumacher H, Dederer J, Schleicher B, Trasser A	Si/SiGe Integrated Circuits for Impulse-Radio UWB Sensing and Communications (Invited Paper)	Proc 19th Asia Pacific Microwave Conference (APMC), Bangkok, Thailand, December 11-14, 2007, pp 931-934	Proceedings
2007	Medjdoub F, Duccatteau D, Gaquière C, Carlin J-F, Gonschorek M, Feltin E, Py MA, Grandjean N, Kohn E	Evaluation of AlInN/GaN HEMTs on sapphire substrate in the microwave, time and temperature domains	Electronic Letters 43 (2007) 71-72	Journal
2007	Medjdoub F, Sarazin N, Tordjman M, Magis M, di Forte-Poisson MA, Knez M, Delos E, Gaquière C, Delage SL, Kohn E	Characteristics of Al2O3/AlInN/GaN MOSHEMT	Electronics Letters 43 (2007) 691-692	Journal
2007	Medjdoub F, Carlin J-F, Gonschorek M, Feltin E, Py MA, Duccatteau D, Gaquière C, Grandjean N, Kohn E	Above 2 A/mm drain current density of GaN HEMTs grown on sapphire	Int J High Speed Electronics and Systems 14 (2007) 91-95	Journal
2007	Kaiser, Alexander	Dreidimensionale Systemintegration: Technologische Entwicklung und Anwendung	University of Ulm, 2007, PhD Thesis	Thesis
2007	Munding, Andreas	Interconnect technology for three-dimensional chip integration	University of Ulm, 2007, PhD Thesis	Thesis
2007	Schick, Christoph	Design and vectorial fourport characterisation of differential 40 Gbit/s modulator drivers in Si/SiGe HBT technology	University of Ulm, 2007, PhD Thesis	Thesis
2007	Schmid, Philipp	Antriebsprinzipien für aktive mikromechanische Bauelemente auf der Basis polykristalliner Diamantfilme	University of Ulm, 2007, PhD Thesis	Thesis
2007	Sönmez, Ertugrul	24 GHz multi-functional MMICs using SiGe HBTs	University of Ulm, 2007, PhD Thesis	Thesis
2007	Alomari, Mohammed	Enhancement of the Chemical Sensitivity of GaN through Nanostructures	University of Ulm, 2007, Master Thesis	Thesis
2007	Mayr, Ulrich	Analyse einer AlInN/GaN Heterostruktur für FET-Sensoranwendungen mittels einer selbstentwickelten Quecksilbertropfenanlage	University of Ulm, 2007, Master Thesis	Thesis
2007	Herfurth, Patrick	Untersuchung zur Herstellung mikromechanischer Aktoren auf der Basis von Nanodiamant mit Resonanzfrequenzen im MHz-Bereich	University of Ulm, 2007, Student Thesis	Thesis
2007	Alomari M, Medjdoub F, Kohn E, Carlin J-F, Gonschorek M, Feltin E, Py MA, Grandjean N, Duccatteau D, Gaquière C	Estimation of the surface potential of unstrained InAlN/GaN HEMTs	Proc 16th Workshop on Heterostructure Technology (HeTech) 2007, Fréjus, France, Sept 2-5, 2007	Proceedings
2007	Medjdoub F, Carlin J-F, Gonschorek M, Feltin E, Py MA, Grandjean N, Gaquière C, Kohn E	Breaking the AlGaN/GaN HEMT scaling limit with AlInN barriers	Proc 31st Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE 2007), Venice, Italy, May 20-23, 2007	Proceedings
2007	Medjdoub F, Carlin J-F, Gonschorek M, Feltin E, Py MA, Knez M, Troadec D, Gaquière C, Chuvilin A, Kaiser U, Grandjean N, Kohn E	Barrier layer downscaling of InAlN/GaN HEMTs	Proc 65th Annual Device Research Conference (DRC 2007), South Bend, IN, USA, June 18-20, 2007, pp 109-110	Proceedings
2007	Medjdoub F, Alomari M, Carlin J-F, Gonschorek M, Feltin E, Py MA, Grandjean N, Kohn E	Thermal stability of 5 nm barrier InAlN/GaN HEMTs	Proc IEEE International Semiconductor Device Research Symposium (ISDRS 2007), College Park, MD, USA, Dec 12-14, 2007, pp 681-682	Proceedings
2007	El-Maghraby, Ahmed Salah El-Din	A silicon-based correlator for analog impulse ultra-wideband radio receivers	University of Ulm, 2007, Master Thesis	Thesis
2007	Liu, Gang	A 35 GHz frequency translation stage using Si/SiGe HBT technology	University of Ulm, 2007, Master Thesis	Thesis
2006	Schleicher, Bernd	Design of 79 GHz SiGe Low Noise and Power Amplifiers for Automotive Radar Applications	University of Ulm, 2006, Master Thesis	Thesis
2006	Xue, Shiyong	Design of a High Speed Limiting Amplifier in a SiGe-HBT Technology	University of Ulm, 2006, Master Thesis	Thesis
2006	Liu, Liu	Design of a 77 GHz Frequency Divider Based on SiGe Technology	University of Ulm, 2006, Master Thesis	Thesis
2006	Kallfass, Ingmar	Comprehensive Nonlinear Modelling of Dispersive Heterostructure Field Effect Transistors and their MMIC Applications	University of Ulm, 2006, PhD Thesis	Thesis
2006	Behtash, Reza	Herstellung und Charakterisierung von Heterostruktur-Feldeffekttransistoren und integrierten Hochfrequenz-Leistungsverstärkern auf AlGaN/GaN-Basis	University of Ulm, 2006, PhD Thesis	Thesis
2006	Hosch, Michael	Entwurf und Technologie von beheizbaren Lochblenden in CVD-Diamant	University of Ulm, 2006, Student Thesis	Thesis
2006	Kallfass I, Schumacher H, Brazil TJ	Multiple Time Constant Modeling of Dispersion Dynamics in Hetero Field-Effect Transistors	IEEE Transactions on Microwave Theory and Techniques 54 (2006) 2312-2320	Journal
2006	Decker, Melanie	HICUM-Modellierung von SiGe HBTs	University of Ulm, 2006, Master Thesis	Thesis
2006	Liu L, Chartier S, Trasser A, Schumacher H	Frequency Divider Using a Si/SiGe HBT Technology for 79 GHz Automotive Radar Applications	4th Joint Symp on Opto- and Microelectronic Devices and Circuits, Duisburg, Germany, September 2-8, 2006	Proceedings
2006	Dederer J, Trasser A, Schumacher H	Compact SiGe HBT low noise amplifiers for 3.1-10.6 GHz ultra-wideband applications	Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, San Diego, USA, January 18-20, 2006, pp 391-394	Proceedings
2006	Dederer J, Trasser A, Schumacher H	A SiGe monocycle impulse generator for impulse radio ultra-wideband applications	German Microwave Conference, Karlsruhe, March 28-30, 2006	Proceedings
2006	Dederer J, Trasser A, Schumacher H	SiGe impulse generator for single-band ultra-wideband applications	International SiGe Technology and Device Meeting, Princeton, USA, May 15-17, 2006, pp 274-275	Proceedings
2006	Kallfass I, Schumacher H, Brazil TJ	A unified approach to charge-conservative capacitance modelling in HEMTs	IEEE Microwave and Wireless Components Letters 16 (2006) 678-680	Journal
2006	Kaiser A, Kück D, Benkart P, Munding A, Prinz GM, Heittmann A, Hübner H, Sauer R, Kohn E	Concept for diamond 3-D integrated UV sensor	Diamond & Related Materials 15 (2006) 1967-1971	Journal
2006	Bschorr M, Pfleiderer HJ, Benkart P, Kaiser A, Munding A, Kohn E, Heittmann A, Hübner H, Ramacher U	Yield-improving test and routing circuits for a novel 3-D interconnect technology	Advances in Radio Science 4 (2006) 225-229	Journal
2006	Kaiser A, Kück D, Benkart P, Munding A, Prinz GM, Heittmann A, Hübner H, Ramacher U, Sauer R, Kohn E	3-D chip integration concept - Diamond DUV sensor on Si	Proc IEEE EDS Workshop on Advanced Electron Devices, Duisburg, Germany, June 13-14, 2006	Proceedings
2006	Benkart P, Munding A, Kaiser A, Kohn E, Heittmann A, Hübner H, Ramacher U	3-dimensional integration scheme with a thermal budget below 300°C	Asia-Pacific Conference of Transducers and Micro-Nano Technology (APCOT) 2006, Singapore, June 25-28, 2006	Proceedings
2006	Munding A, Kaiser A, Benkart P, Heittmann A, Hübner H, Ramacher U, Kohn E	Scaling aspects for micro joints for 3-D chip interconnects	36th European Solid State Device Research Conf (ESSDERC 2006), Montreux, Switzerland, September 18-22, 2006, pp 262-265	Proceedings
2006	Dipalo M, Kusterer J, Janischowsky K, Kohn E	N-type doped nano-diamond in a first MEMS application	phys stat sol (a) 203 (2006) 3036-3041	Journal
2006	Kohn E, Manfredotti C	Carbon materials in biochemistry and biophysics	Advances in Science and Technology 48 (2006) 151-160	Journal
2006	Chartier S, Sönmez E, Schumacher H	Millimeter-wave amplifiers using a 0.8 µm Si/SiGe HBT technology	Proc IEEE Topical Meeting on Silicon Monolithic ICs in RF Systems, San Diego, USA, Jan 18-20, 2006, pp 277-280	Proceedings
2006	Chartier S, Schleicher B, Feger T, Purtova T, Schumacher H	79 GHz fully integrated fully differential Si/SiGe HBT amplifier for automotive radar applications	Proc IEEE Int Conf on Electronics, Circuits and Systems, Nice, France, Dec 10-13, 2006, pp 1011-1014	Proceedings
2006	Hosch, Michael	Charakterisierung und Modellierung von pseudomorphen AlGaAs/InGaAs/GaAs HEMTs mit ultra kurzen Gates	University of Ulm, 2006, Master Thesis	Thesis
2006	Siegel C, Ziegler V, Schönlinner B, Prechtel U, Schumacher H	Simplified RF-MEMS switches using implanted conductors and thermal oxide	36th Europ Microwave Conf, Manchester, UK, Sept 10-15, 2006, Technical Digest, pp 1735-1738	Proceedings
2006	Kusterer J, Hernandez FJ, Haroon S, Schmid P, Munding A, Müller R, Kohn E	Bi-stable micro actuator based on stress engineered nano-diamond	Diamond & Related Materials 15 (2006) 773-776	Journal
2006	Kusterer J, Schmid P, Kohn E	Mechanical microactuators based on nanocrystalline diamond films	New Diamond and Frontier Carbon Technology 16 (2006) 295-321	Journal
2006	Dederer J, Trasser A, Schumacher H	A SiGe monocycle impulse generator for impulse radio ultra-wideband applications	Proceedings of the European Microwave Association 2 (2006)	Journal
2006	Medjdoub F, Carlin J-F, Gonschorek M, Py MA, Grandjean N, Vandenbrouk S, Gaquière C, Dejaeger JC, Kohn E	Small signal characteristics of AlInN/GaN HEMTs	Electronics Letters 42 (2006) 779-780	Journal
2006	Abele, Peter	Eine Integrationstechnik auf Waferebene für Millimeterwellenschaltungen unter Verwendung von Techniken aus der Mikromechanik	University of Ulm, 2006, PhD Thesis	Thesis
2006	Müller, Ralph	Mikrofluidik auf der Basis von CVD-Diamant	University of Ulm, 2006, PhD Thesis	Thesis
2006	Neuburger, Martin	Entwurf und Technologie von GaN-Heterostruktur FETs für hohe Leistung	University of Ulm, 2006, PhD Thesis	Thesis
2006	Kück, Daniel Matthias	Untersuchungen und Optimierung an wasserstoffterminierten Diamantoberflächen zur Herstellung von Diamant-FETs	University of Ulm, 2006, Master Thesis	Thesis
2006	Pietzka, Carsten	Herstellung und Charakterisierung von GaN-basierenden pH-Sensoren	University of Ulm, 2006, Master Thesis	Thesis
2006	Friedrich, Thomas	Piezoelektrische Drucksensoren	University of Ulm, 2006, Student Thesis	Thesis
2006	Medjdoub F, Carlin J-F, Gonschorek M, Py MA, Grandjean N, Kohn E	Promising AlInN/GaN HEMT structures for high power performance	Proc IEEE EDS Workshop on Advanced Electron Devices 2006, Duisburg, Germany, June 13-14, 2006	Proceedings
2006	Medjdoub F, Carlin J-F, Gonschorek M, Py MA, Grandjean N, Kohn E	Novel AlInN/GaN HEMT structures for high power performance	Proc 30th Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE 2006), Fiskebäckskil, Sweden, May 14-17, 2006	Proceedings
2006	Medjdoub F, Carlin J-F, Gonschorek M, Feltin E, Py MA, Grandjean N, Kohn E	Impact of field plate technology on the Schottky diode characteristic of InAlN/GaN HEMTs	Proc 15th European Workshop on Heterostructure Technology (HeTech 2006), Manchester, UK, Oct 2-4, 2006	Proceedings
2006	Medjdoub F, Duccatteau D, Gaquière C, Carlin J-F, Gonschorek M, Feltin E, Py MA, Grandjean N, Kohn E	Surface capping of AlInN/GaN HEMT structures	Proc European Workshop on III-Nitride Semiconductor Materials and Devices 2006, Anissaras Hersonissos, Iraklion Crete, Greece, Sept 18-20, 2006	Proceedings
2006	Medjdoub F, Carlin J-F, Gonschorek M, Feltin E, Py MA, Duccatteau D, Gaquière C, Grandjean N, Kohn E	Can InAlN/GaN be an alternative to high power/high temperature AlGaN/GaN devices?	Proc International Electron Devices Meeting (IEDM '06), San Francisco, CA, USA, Dec 11-13, 2006	Proceedings
2006	Zehringer, Stefan	Untersuchungen zu einem Ultra-Wideband (UWB) Sendepfad mit sehr geringer Standby-Leistung	University of Ulm, 2006, Master Thesis	Thesis
2005	Kallfass I, Schumacher H, Purtova T, Brokmeier A, Ludwig W	One single travelling-wave MMIC for highly linear broadband mixers and variable gain amplifiers	Proc International Microwave Symposium, Long Beach, USA, June 12-17, 2005	Proceedings
2005	Siegel C, Ziegler V, Prechtel U, Schumacher H	Low-complexity RF-MEMS technology for microwave phase shifting applications	German Microwave Conference, Ulm, Germany, April 5-7, 2005	Proceedings
2005	Siegel C, Ziegler V, Prechtel U, Schumacher H	Very low complexity RF-MEMS technology for wide range tunable microwave filters	European Microwave Week, Paris, France, Oct 3-7, 2005	Proceedings
2005	Kaiser A, Munding A, Benkart P, Bschorr M, Heittmann A, Huebner A, Pfleiderer HJ, Ramacher U, Kohn E	3-D chip integration technology for microsystems	207th Meeting of the Electrochemical Society, Québec, Canada, May 15-20, 2005, Abstract Book, p 1763	Proceedings
2005	Bschorr M, Pfleiderer HJ, Benkart P, Kaiser A, Munding A, Kohn E, Heittmann A, Hübner H, Ramacher U	Eine Test- und Ansteuerschaltung für eine neuartige 3D Verbindungstechnologie	Advances in Radio Science 3 (2005)	Journal
2005	Benkart P, Kaiser A, Munding A, Bschorr M, Pfleiderer HJ, Kohn E, Heittmann A, Huebner H, Ramacher U	3D chip stack technology using through chip interconnects	IEEE Design & Test of Computers 22 (2005) 512-518	Journal
2005	Kaiser A, Munding A, Benkart P, Bschorr M, Heittmann A, Hübner H, Ramacher U, Pfleiderer HJ, Kohn E	3-D integration technology for sensor systems	WOCSEMMAD 2005, Miama, FL, USA, Feb 20-23, 2005	Proceedings
2005	Schick C, Feger T, Sönmez E, Schad KB, Trasser A, Schumacher H	Attenuation compensation techniques in distributed SiGe HBT amplifiers using highly lossy thin film microstrip lines	International Microwave Symposium, Long Beach, CA, USA, June 12-17, 2005	Proceedings
2005	Sönmez E, Chartier S, Trasser A, Schumacher H	Isolation issues in multifunctional Si/SiGe ICs at 24 GHz	International Microwave Symposium, Long Beach, CA, USA, June 12-17, 2005	Proceedings
2005	Sönmez E, Chartier S, Abele P, Trasser A, Schumacher H	Sensitivity matched static frequency divider using a 0.8 µm SiGe HBT technology	German Microwave Conference, Ulm, Germany, April 5-7, 2005	Proceedings
2005	Sönmez E, Chartier S, Schick C, Trasser A, Schumacher H	Fully integrated differential 24 GHz receiver using a 0.8 µm SiGe HBT technology	European Microwave Conference, Paris, France, Oct 3-7, 2005	Proceedings
2005	Kubovic M, Janischowsky K, Kohn E	Surface channel MESFETs on nanocrystalline diamond	Diamond & Related Materials 14 (2005) 514-517	Journal
2005	Zimmermann T, Kubovic M, Denisenko A, Janischowsky K, Williams OA, Gruen DM, Kohn E	Ultra-nano-crystalline/single crystal diamond heterostructure diode	Diamond & Related Materials 14 (2005) 416-420	Journal
2005	Häfele M, Beilenhoff K, Schumacher H	A GaAs distributed amplifier with more than 7Vpp output for 40Gbit/s modulators	GeMiC 2005 Conference, Ulm, Germany, April 5-7, 2005, pp 221-223	Proceedings
2005	Häfele M, Trasser A, Beilenhoff K, Schumacher H	A GaAs distributed amplifier with an output voltage of 8.5Vpp for 40Gb/s modulators	GaAs 2005, Paris, France, Oct 3-7, 2005	Proceedings
2005	Häfele M, Beilenhoff K, Schumacher H	GaAs distributed amplifiers with up to 350GHz gain-bandwidth product for 40Gb/s LiNbO3 modulator drivers	European Microwave Conference, Paris, France, Oct 3-7, 2005	Proceedings
2005	Dadgar A, Neuburger M, Schulze F, Bläsing J, Krtschil A, Daumiller I, Kunze M, Günther K-M, Witte H, Diez A, Kohn E, Krost A	High-current AlInN/GaN field effect transistors	phys stat sol 202 (2005) 832-836	Journal
2005	Hernandez-Guillen FJ, Janischowsky K, Kusterer J, Ebert W, Kohn E	Mechanical characterization and stress engineering of nanocrystalline diamond films for MEMS applications	Diamond & Related Materials 14 (2005) 411-415	Journal
2005	Denisenko A, Kohn E	Diamond power devices. Concepts and limits	Diamond & Related Materials 14 (2005) 491-498	Journal
2005	Müller R, Gronmaier R, Janischowsky K, Kusterer J, Kohn E	An “all-diamond” inkjet realized in sacrificial layer technology	Diamond & Related Materials 14 (2005) 504-508	Journal
2005	Berger, Wolfgang	Design und Herstellung eines monolithisch integrierten Diamant Inkjet Elements mittels Kupfer Opferschichttechnologie	University of Ulm, 2005, Student Thesis	Thesis
2005	Haroon, Sheraz	Development of a microbridge structure based on CVD-diamond	University of Ulm, 2005, Master Thesis	Thesis
2005	Zehringer, Stefan	Untersuchung einer Siliziumdioxidopferschicht für All-Diamond-Bubble-Jets für Subpicolitertropfen	University of Ulm, 2005, Student Thesis	Thesis
2005	Zhang, Chaoming	Impact of frequency dispersion effects on MMIC design	University of Ulm, 2005, Master Thesis	Thesis
2005	Schick C, Weiß H, Hernandez-Guillen F, Trasser A, Schumacher H	Ultra-compact 350 GHz gain-bandwidth product 40 GBit/s predriver IC in SiGe bipolar technology	Electronics Letters 41 (2005) 1116-1118	Journal
2005	Schick C, Feger T, Sönmez E, Schad KB, Trasser A, Schumacher H	Broadband SiGe HBT Amplifier Concepts for 40 Gbit/s Fibre-Optic Communication	Proc 35th European Microwave Conference, Paris, France, Oct 4-6, 2005, pp 113-116	Proceedings
2005	Kallfass I, Gruson F, Abele P et al	A SiGe HEMT mixer IC with low conversion loss	Proc 11th GaAs Symp during 33rd Europ Microwave Conf, Munich, Germany, October 6-10, 2006, pp 513-516	Proceedings
2005	Kusterer J, Aleksov A, Pasquarelli A, Müller R, Ebert W, Lehmann-Horn F, Kohn E	A diamond-on-silicon patch-clamp-system	Diamond & Related Materials 14 (2005) 2139-2142	Journal
2005	Kusterer J, Haroon S, Kohn E, Chen T, Menzel W	Bi-stable diamond bridge actuator	Proc Microsystem Technologies Int Conf, Munich, Germany, October 5-6, 2005, pp 575-577	Proceedings
2005	Kück, Daniel Matthias	Evaluation einer Technologie zur dreidimensionalen Integration von Diamantelementen	University of Ulm, 2005, Student Thesis	Thesis
2004	Kubovic M, Denisenko A, Ebert W, Kasu M, Kallfass I, Kohn E	Electronic surface barrier characteristics of H-terminated and surface conductive diamond	Diamond & Related Materials 13 (2004) 755-760	Journal
2004	Karthaus U, Alomari N, Bergmann G, Schumacher H	High dynamic range, high output power I/Q modulator in 50 GHz ft SiGe technology	Proc IEEE Radio Frequency ICs (RFIC) Symposium, Fort Worth, Texas, USA, June 5-8, 2004, pp 539-542	Proceedings
2004	Kasu M, Kubovic M, Aleksov A, Teofilov N, Taniyasu Y, Sauer R, Kohn E, Makimoto T, Kobayashi N	Influence of epitaxy on the surface conduction of diamond film	Diamond & Related Materials 13 (2004) 226-232	Journal
2004	Müller R, Adamschik M, Steidl D, Kohn E, Thamasett S, Stiller S, Hanke H, Hornbach V	Application of CVD-diamond for catheter ablation in the heart	Diamond & Related Materials 13 (2004) 1080-1083	Journal
2004	Müller R, Schmid P, Munding A, Gronmaier R, Kohn E	Elements for surface microfluids in diamond	Diamond & Related Materials 13 (2004) 780-784	Journal
2004	Kubovic M, Kasu M, Kallfass I, Neuburger M, Aleksov A, Koley G, Spencer MG, Kohn E	Microwave performance evaluation of diamond surface channel FETs	Diamond & Related Materials 13 (2004) 802-807	Journal
2004	Aleksov A, Kubovic M, Kasu M, Schmid P, Grobe D, Ertl S, Schreck M, Stritzker B, Kohn E	Diamond-based electronics for RF applications	Diamond & Related Materials 13 (2004) 233-240	Journal
2004	Kasu M, Kubovic A, Aleksov A, Kallfass I, Schumacher H, Kohn E, Kobayashi N	Microwave performance of diamond MESFET	Journal of the Japan Society of Applied Physics 73 (2004) 363-367	Journal
2004	Juncu VD, Kallfass I, Sloan R, Hatfield JV	Behaviour of logic gates fabricated on Si/SiGe MODFET technology	Electronics Letters 40 (2004) 772-774	Journal
2004	Kallfass I, Brazil TJ, OhAnnaidh B, Abele P, Hackbarth T, Zeuner M, König U, Schumacher H	Large signal modelling including low frequency dispersion on N-channel SiGe MODFETs and MMIC applications	Solid State Electronics 48 (2004) 1433-1441	Journal
2004	Kallfass I, Schick C, Schumacher H, Brazil TJ	A universal large-signal model for hetero field effect transistors	Proc 12th GaAs Symposium, European Microwave Week, Amsterdam, NL, Oct 2004, 55-58	Proceedings
2004	Kohn E, Adamschik M, Aleksov A, Denisenko A, Janischowsky C, Hernandez-Guillen F, Kaiser A, Kasu M, Kubovic M, Kusterer J, Müller R, Schmid P	Diamond technology for MEMS and electronics	11th Int Conference on Mixed Design of Integrated Circuits and Systems (MIXDES), Szczecin, Poland, June 24-26, 2004	Proceedings
2004	Munding A, Kaiser A, Benkart P, Bschorr M, Heittmann A, Hübner H, Pfleiderer HJ, Ramacher U, Kohn E	Chip stacking technology for 3D-integration of sensor systems	13th European Workshop on Heterostructure Technology (HETECH), Heraklion, Crete, October 3-6, 2004, Book of Abstracts	Proceedings
2004	Chartier S, Sönmez E, Schumacher H	24 and 36 GHz SiGe HBT power amplfiers	Proc IEEE Topical Meetig on Silicon Monolithic Integrated Circuits in RF systems (SiRF), Atlanta, Georgia, USA, September 8-10, 2004, 251-254	Proceedings
2004	Karthaus U, Gruson F, Bergmann G, Pascht A	Improved 4-channel, direct conversion SiGe receiver IC for UMTS base stations	Special issue of Microwave and Wireless Component Letters. Special issue, July (2004)	Journal
2004	Gruson F, Gaborit G, Abele P, Schumacher H	A broadband SiGe mixer for 5-GHz WLAN applications with X-band quadrature generation and high image-rejection	Proc IEEE Radio Frequency Integrated Circuits (RFIC) Symposium, Ft Worth, Texas, USA, June 6-8, 2004	Proceedings
2004	Gruson F, Schumacher H, Schulz H, Golberg HJ, Durler M, Spiegel SJ	GPS low noise amplifier with high immunity to wireless jamming signals	Proc SiRF Meeting (IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems), Atlanta, Georgia, USA, Sep 8-10, 2004	Proceedings
2004	Gruson F, Hettich S, Trasser A, Schumacher H	Linear front-end ICs for TETRA/TETRAPOL handhelds using SiGe technology	Int Symposium on Signals, Systems, and Electronics (ISSSE), Linz Austria, Aug 10-13, 2004	Proceedings
2004	Gruson F, Bergmann G, Schumacher H	A frequency doubler with high conversion gain and good fundamental suppression	Proc Int Microwave Symposium (IMS), Ft Worth, Texas, USA, June 6-11, 2004, 175-178	Proceedings
2004	Abele P, Trasser A, Sönmez E, Schad KB, Munding A, Schumacher H	A compact low-cost Doppler sensor MMIC in SiGe technology for the ISM band at 24 GHz	Proc European Microwave Conference (EuMC/EMW), Amsterdam, NL, October 2004	Proceedings
2004	Abele P, Trasser A, Schad K-B, Sönmez E, Schumacher H	Compact Doppler sensor operating at 31-32 GHz using a SiGe HBT MMIC and patch antennas	Proc SiRF Meeting (IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems), Atlanta, Georgia, USA, Sep, 8-10, 2004	Proceedings
2004	Abele P, Schumacher H	On-wafer loop and patch-antennas for a wafer level integration technology	Proc MEMSWAVE, Uppsala, Sweden, June 28 - July 1, 2004, D3-D6	Proceedings
2004	Kohn E, Zimmermann T, Kubovic M, Gruen DM, Williams O	A new diamond based heterostructure diode	Proc IEEE Lester Eastman Conference, Troy, NY, USA, August 2004	Proceedings
2004	Munshi K, Vempada P, Deh K, Prasad S, Sönmez E, Schumacher H	Microwave circuit modelling with neural networks and genetic algorithms	Proc Asia-Pacific Microwave Conference, Delhi, India, Dec 15-18, 2004, Paper no. APMC/04/I/334	Proceedings
2004	Müller R, Kusterer J, Schmid P, Janischowskyy K, Hernandez-Guillen F, Denisenko A, Kohn E	MEMS technology based on CVD-diamond	Int Workshop on MEMS and Nanotechnology Integration, Montreux, Switzerland, May 10-11, 2004, 18-26	Proceedings
2004	Baier, Maximilian Paul	Entfernung der AlAs Stoppschicht bei pHEMTs nach der Recessgrabenätzung	University of Ulm, 2004, Student Thesis	Thesis
2004	Feger, Till	Entwurf und Aufbau breitbandiger SiGe HBT Vorverstärkerzum Einsatz in optischen Übertragungssystemen	University of Ulm, 2004, Master Thesis	Thesis
2004	Höck, Georg	Silizium Germanium p-Kanal Heterostruktur Feldeffekttransistoren	University of Ulm, 2004, PhD Thesis	Thesis
2004	Kalb, Franziska	Herstellung und Charakterisierung von Niedertemperatur-Siliziumoxid	University of Ulm, 2004, Student Thesis	Thesis
2004	Pietzka, Carsten	Piezoelektrische Sensorstrukturen mit AlGaN/GaN-HEMTs	University of Ulm, 2004, Student Thesis	Thesis
2004	Purtova, Tatyana	Design of a wide band distributed mixer in pHEMT technology	University of Ulm, 2004, Master Thesis	Thesis
2004	Roos, Matthias	Untersuchung des Wachstums und der Eigenschaften CVD-gewachsener CNT	University of Ulm, 2004, Student Thesis	Thesis
2004	Ulmann, Matthias	Entwurf und Aufbau einer Microcontrollerschaltung zur Auswertung eines Dopplersensorsignals	University of Ulm, Student Thesis	Thesis
2004	Busquère JP, Do N, Bougriha F, Pons P, Grenier K, Dubuc D, Boukabache A, Schumacher H, Abele P, Rydberg A, Öjefors E, Ancey P, Bouche G, Plana R	MEMS SiGe Technologies for Advanced Wireless Communications	Proc IEEE Radio Frequency Integrated Circuits Symposium (RFIC) 2004, pp 247-250	Proceedings
2003	Sönmez E, Trasser A, Abele P, Schad KB, Schumacher H	Integrated receiver components for low-cost 26 GHz LMDS applications using an 0.8 µm SiGe HBT technology	Proc European Microwave Conference (EuMC/EuMW), Munich, Germany, Oct 6-10, 2003, pp 399-402	Proceedings
2003	Abele P, Zeuner M, Kallfass I, Müller J, Laban Hiwilepo H, Hackbarth T, Chrastina D, von Känel H, König U, Schumacher H	32 GHz MMIC distributed amplifier based on N-channel SiGe MODFETs	Electronics Letters 39 (2003) 1448-1449	Journal
2003	Feger, Till	Extraktion eines Ersatzschaltbildes für integrierte Transformatoren auf Silizium	University of Ulm, 2003, Student Thesis	Thesis
2003	Wieszt, Andreas	Entwurf und Entwicklung eines hybriden GaN/AlGaN Leistungsverstärkers für X-Band Applikationen	University of Ulm, 2003, PhD Thesis	Thesis
2003	Sönmez E, Trasser A, Abele P, Gruson F, Schad KB, Schumacher H	24 GHz high sensitivity downconverter using a commercial SiGe HBT MMIC foundry technology	Proc IEEE Topical Meeting on Silicon Monolithic ICs in RF Systems (SiRF), Grainau, Germany, April 9-11, 2003, pp 68-71	Proceedings
2003	Aleksov A, Denisenko A, Kunze M, Vescan A, Bergmaier A, Dollinger G, Ebert W, Kohn E	Diamond diodes and transistors	Semiconductor Science Technology 18 (2003) S59-S66	Journal
2003	Kohn E, Neuburger M, Daumiller I, Krtschil A, Krost A, v. Nostrand J, Jenkins T	Instabilities in GaN based FET devices - nature and alternative structures	203rd Meeting of the Electrochemical Society, Paris, France, April 27-May 2, 2003	Proceedings
2003	Aleksov A, Schreck M, Schmid P, Kohn E	Diamond - the next generation material for high power electronics	203rd Meeting of the Electrochemical Society, Paris, France, April 27-May 2, 2003	Proceedings
2003	Schmid P, Hernandez-Guillen FJ, Kohn E	Diamond switch using new thermal actuation principle	Diamond & Related Materials 12 (2003) 418-421	Journal
2003	Kubovic M, Aleksov A, Schreck M, Bauer T, Stritzker B, Kohn E	Field effect transistor fabricated on hydrogen-terminated diamond grown on SrTiO3 substrate and iridium buffer layer	Diamond & Related Materials 12 (2003) 403-407	Journal
2003	Aleksov A, Kubovic M, Kaeb N, Spitzberg U, Bergmaier A, Dollinger G, Bauer T, Schreck M, Stritzker B, Kohn E	Diamond field effect transistors - concepts and challenges	Diamond & Related Materials 12 (2003) 391-398	Journal
2003	Janischowsky K, Ebert W, Kohn E	Bias enhanced nucleation of diamond on silicon in a HFCVD system	Diamond & Related Materials 12 (2003) 336-339	Journal
2003	Müller R, Denisenko A, Kohn E	Effect of surface quality on ion sensitivity of H-terminated diamond	Diamond & Related Materials 12 (2003) 554-559	Journal
2003	Kasu M, Makimoto T, Ebert W, Kohn E	Formation of stacking faults containing microtwins in (111) chemical-vapor-deposited diamond homoepitaxial layers	Applied Physics Letters 83 (2003) 3465-3467	Journal
2003	Zimmermann T, Neuburger M, Kunze M, Daumiller I, Denisenko A, Dadgar A, Krost A, Kohn E	P-channel InGaN-HFET structure based on polarization doping	61st Device Research Conference, Salt Lake City, Utah, USA, June 23-25, 2003	Proceedings
2003	Abele P, Trasser A, Schad KB, Sönmez E, Schumacher H	A 32 GHz SiGe-MMIC single chip oscillator and mixer for use in a Doppler sensor	Proc 3rd ESA Workshop on Millimetre Wave Technology and Applications, Espoo, Finland, May 21-23, 2003, 311-315	Proceedings
2003	Abele P, Konle J, Behammer D, Sönmez E, Schad KB, Trasser A, Schumacher H	Wafer level integration of a 24 GHz and 34 GHz differential SiGe-MMIC oscillator with a loop antenna on a BCB membrane	Proc Int Microwave Symposium (IMS), Philadelphia, PA, USA, June 8-13, 2003, 1033-1036	Proceedings
2003	Abele P, Kallfass I, Zeuner M, Müller J, Hackbarth T, Chrastina D, v. Känel H, König U, Schumacher H	32 GHz and 40 GHz bandwidth distributed amplifier MMICs based on N-channel SiGe MODFETs	Proc Int Semiconductor Device Research Symposium, Washington, Columbia, USA, Dec 10-12, 2003, 55-56	Proceedings
2003	Abele P, Trasser A, Schad KB, Sönmez E, Schumacher H	Compact SiGe-MMIC Doppler sensor operating at 31-32 GHz	Proc Int Radar Symposium, Dresden, Germany, Sep 30-Oct 2, 2003, 499-502	Proceedings
2003	Danesh M, Gruson F, Abele P, Schumacher H	Differential VCO and frequency tripler using SiGe HBTs fort he 24 GHz ISM Band	Proc IEEE Radio Frequency Integrated Circuits (RFIC) Symposium, Philadelphia, PA, USA, June 2003, 277-280	Proceedings
2003	Abele P, Schad KB, Sönmez E, Trasser A, König U, Schumacher H	On wafer antennas and lines for a wafer level integration technology	Proc MEMSWAVE, 4th Workshop on MEMS for Millimeter Wave Communications, LAAS-CNR, Toulouse, France, July 2-4, 2003, D3-D6	Proceedings
2003	Abele P, Stephan R, Birk M, Behammer D, Kibbel H, Trasser A, Schad KB, Sönmez E, Schumacher H	An electrically tunable true-time-delay line on Si for a broadband noise radar	Proc SiRF Meeting (IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems), Grainau, Germany, April 2003, 130-133	Proceedings
2003	Kallfass I, Gruson F, Abele P, Michelakis K, Hackbarth T, Hieber KH, Müller J, Schumacher H	A SiGe HEMT mixer IC with low conversion loss	Proc 33rd Europ Microwave Week, Munich, Germany, October 6-10, 2003, pp 407-410	Proceedings
2003	Kaiser A, Kohn E, Seliger H	Preparation of DNA-chips using diamond-based microreaction technology	27. Internat. Ausstellungskongress für Chemische Technik, Umweltschutz und Biotechnologie ACHEMA 2003, Frankfurt/Main, Germany, May 19-24, 2003	Proceedings
2003	Gruson F, Abele P, Schad KB, Sönmez E, Schumacher H	24GHz differential SiGe-MMIC oscillator with integrated mixer	Proc IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, Grainau, Germany, April 9-11, 2003, 60-63	Proceedings
2003	Schumacher H, Abele P, Sönmez E, Schad KB, Trasser A	Low-cost circuit solutions for micro- and millimeterwave systems using commercially available SiGe technologies	1st Int SiGe Technology and Device Meeting (ISTDM), Nagoya, Japan, Jan 14-17, 2003	Proceedings
2003	Polleux JL, Moutier F, Billabert AL, Rumelhard C, Sönmez E, Schumacher H	A SiGe/Si heterojunction phototransistor for opto-microwave applications: Modeling and first experimental results	Proc European Microwave Conference (GAAS/EMW), Munich, Germany, Oct 6-10, 2003, 231-234	Proceedings
2003	Schad KB, Häfele M, Schumacher H	Dispositionsunterstützungssystem für Rettungsleitstellen	Tagungsband zum doIT Software-Forschungstag, Stuttgart, Germany, 45-54, Nov 18, 2003	Proceedings
2003	Schad KB, Trasser A, Schumacher H, Schwerzel W	Circuit design of digital receivers at 2.4 GHz and 24 GHz	Proc EuMC Workshop: Reconfigurable mm-Wafe Electronics and System Integration on Silicon, Munich, Germany, Oct 8, 2003, 77-93	Proceedings
2003	Häfele M, Schwörer C, Beilenhoff K, Schumacher H	A GaAs PHEMT distributed amplifier with low group delay time variation for 40 GBit/s optical systems	Digest of European Microwave Conference (EUMC/EMW 2003), Munich, Germany, Oct 6-10, 1091-1094	Proceedings
2003	Karthaus U, Gruson F, Bitzer T, Vogelmann H, Bergmann G, Alomari N , Weese K, Pascht A	Fully integrated 4-channel direct conversion SiGe receiver IC for UMTS base stations	Proc European Microwave Conference (EUMC/EMW), Munich, Germany, Oct 6-10, 2003, 213-216	Proceedings
2003	Kasu M, Kubovic M, Aleksov A, Kallfass I, Spitzberg U, Kobayashi N, Schumacher H, Kohn E	Microwave performance of diamond surface-channel FET	Proc 61st Device Research Conference, Salt Lake City, Utah, USA, June 2003, 21 (abstract)	Proceedings
2003	Müller R, Schmid P, Munding A, Hernandez-Guillen F, Kohn E	Bi-stable thermal microactuators based on CVD diamond	Proc 7th Applied Diamond Conference ADC/FCT 2003, 2003, 136-140	Proceedings
2003	Kohn E, Menzel W, Hernandez-Guillen F, Müller R, Munding A, Schmid P	Evaluation of CVD diamond for heavy duty microwave switches	IEEE MTT-S Int Microwave Symposium Digest 2003 (2003) 1625-1628	Journal
2003	Allgaier, Johannes	Untersuchungen unterschiedlicher Feldplattenkonzepte auf Gruppe-III-Nitriden basierender FETs	University of Ulm, 2003, Master Thesis	Thesis
2003	Benkart, Peter	Untersuchung der Piezo-Eigenschaften GaN-basierter Hetero-Strukturen für Sensorik-Applikationen	University of Ulm, 2003, Master Thesis	Thesis
2003	Chartier,Sébastien	Entwurf eines schaltbaren Verstärkers bei 5 GHz	University of Ulm, 2003, Master Thesis	Thesis
2003	Feger, Till	Extraktion eines Ersatzschaltbildes für integrierte Transformatoren auf Silizium	University of Ulm, 2003, Student Thesis	Thesis
2003	Fischer, Tobias	Herstellung und Charakterisierung einer Diamantmembran für eine 2-Chip-Membranpumpe	University of Ulm, 2003, Student Thesis	Thesis
2003	Gronmaier, Roland	Entwicklung einer Technologie für Mikromembranpumpen-Strukturen auf Diamant	University of Ulm, 2003, Master Thesis	Thesis
2003	Gronmaier, Roland	Untersuchung galvanischer Opferschichten zur Herstellung von Diamant-Oberflächenkanälen	University of Ulm, 2003, Student Thesis	Thesis
2003	Hofinger, Matthias	Simulation und Aufbau des analogen Frontends für einen DVB-T Empfänger	University of Ulm, 2003, Master Thesis	Thesis
2003	Kechele, Timm	Herstellung von Wärmesenken für GaN-basierende Heterostruktur-Feldeffekttransistoren	University of Ulm, 2003, Student Thesis	Thesis
2003	Richard, Sunday	A 5.8 GHz WLAN receiver using RFCMOS technology	University of Ulm, 2003, Master Thesis	Thesis
2003	Wang, Li	A 16/17 dual modulus prescaler in SiGe technology	University of Ulm, 2003, Master Thesis	Thesis
2003	Zhang, Tao	A 10Gbps laserdriver in SiGe HBT technology	University of Ulm, 2003, Master Thesis	Thesis
2003	Abele P, Öjefors E, Schad KB, Sönmez E, Trasser A, Konle J, Schumacher H	Wafer level integration of a 24 GHz differential SiGe-MMIC oscillator with a patch antenna using BCB as a dielectric layer	Proc 33rd Europ Microwave Conf, Munich, Germany, October 6-10, 2003, pp 293-296	Proceedings
2002	Sönmez E, Abele P, Schad KB, Trasser A, Schumacher H	Prospects for MEMS-like technologies in microwave and milimeter wave systems	Micromachined Circuits for Microwave and Millimeter Wave Applications (MEMSWAVE), Heraklion, Crete, June 26-28, 2002	Proceedings
2002	Kohn E, Daumiller I, Kunze M, v. Nostrand J, Sewell J, Jenkins T	Switching behavior of GaN-based HFETs: Thermal and electronic transients	Electronics Letters 38 (2003) 603-605	Journal
2002	Müller R, Denisenko A, Adamschik M, Kohn E	On the ion-sensitivity of H-terminated surface channel devices on diamond	Diamond & Related Materials 11 (2002) 651-656	Journal
2002	Aleksov A, Denisenko A, Spitzberg U, Jenkins T, Ebert W, Kohn E	RF performance of surface channel diamond FETs with sub-micron gate length	Diamond & Related Materials 11 (2002) 382-386	Journal
2002	Adamschik M, Kusterer J, Schmid P, Schad KB, Grobe D, Flöter A, Kohn E	Diamond microwave micro relay	Diamond & Related Materials 11 (2002) 672-676	Journal
2002	Kubovic M, Aleksov A, Denisenko A, Kohn E	Advances in diamond surface channel FET technology with focus on large signal properties	Proc IEEE Lester Eastman Conference, Newark, DE, USA, Aug 20, 2002, 90	Proceedings
2002	Janischowsky K, Ebert W, Kohn E	Bias enhanced nucleation of diamond on silicon (100) in a HFCVD system	Diamond, Granada, Spain, 2002	Proceedings
2002	Kallfass I, Zeuner M, König U, Schumacher H, Brazil TJ	A Model for SiGe MODFETs with Improved Large Signal Quality and Frequency Range	10th GaAs Symposium, European Microwave Week, Milano, Italy, September 2002	Proceedings
2002	Kaiser A, Hinz M, Adamschik M, Schmid P, Mueller R, Maier C, Brugger H, Hofer EP, Seliger H, Kohn E	Diamond based injection system for spotting and synthesis in biochemistry	Conf Proc Sensor Technology. AIChE Annual Meeting 2002, Indianapolis, Indiana, USA, Nov 3-8, 2002, 175-182	Proceedings
2002	Sönmez E, Trasser A, Schad KB, Abele P, Schumacher H	A single-chip 24 GHz receiver front-end using a commercially available SiGe HBT foundry process	Proc IEEE Radio Frequency Integrated Circuits (RFIC) Symposium, Seattle, WA, USA, June 4, 2002, 159-162	Proceedings
2002	Kallfass I, Zeuner M, König U, Schumacher H, Brazil TJ	A DC to 40 GHz large signal model for N-channel SiGe HFET transistors including low-frequency dispersion	European Microwave Week, Milano, Italy, September 2002	Proceedings
2002	Abele P, Birk M, Behammer D, Kibbel H, Trasser A, Maier P, Schad KB, Sönmez E, Schumacher H	Sampling circuit on silicon substrate for frequencies beyond 50 GHz	Proc Int Microwave Symposium (IMS), Seattle, WA, USA, June 2-7, 2002, 1681-1684	Proceedings
2002	Aleksov A, Kubovic M, Kaeb N, Spitzberg U, Daumiller I, Bauer T, Schreck M, Stritzker B, Kohn E	First diamond FET RF power measurement on diamond quasi-substrate	Proc 60th Device Research Conference, Santa Barbara, CA, USA, June 2002, 181 (abstract)	Proceedings
2002	Aleksov, Aleksandar	Konzepte und Technologie für diamantbasierende Feldeffekttransistoren	University of Ulm, 2002, PhD Thesis	Thesis
2002	Antritter, Felix	Prozessierung, Charakterisierung und Regelung eines Diamant-Mikroheizers	University of Ulm, 2002, Student Thesis	Thesis
2002	Chowdhury, Mizanur Rahman	Design of a highly linear mixer for a PMR front-end using SiGe HBT technology	University of Ulm, 2002, Master Thesis	Thesis
2002	Daumiller, Ingo	Herstellung und Charakterisierung von GaN-basierenden Heterostruktur-Feldeffekttransistoren	University of Ulm, 2002, PhD Thesis	Thesis
2002	Hamdi, Örün	Investigation of polarization effects in WDM 10 Gbit/s recirculating loop transmission systems	University of Ulm, 2002, Master Thesis	Thesis
2002	Hasouneh, Fayez	Rauscharmer Vorverstärker mit hoher Linearität für Betriebsfunkgeräte	University of Ulm, 2002, Master Thesis	Thesis
2002	Hernández Guillén, Francisco José	Development and optimization of a diamond based bistable switch	University of Ulm, 2002, Master Thesis	Thesis
2002	Hiwilepo, Laban Hiwilepo	Design of a wideband amplifier using Si/SiGe HFETs	University of Ulm, 2002, Master Thesis	Thesis
2002	Kroner, Andrea	Examination of a slot loop antenna as radiating part of the ARTEMIS front-end	University of Ulm, 2002, Student Thesis	Thesis
2002	Munding, Andreas	Entwicklung von Mikro-Membranpumpen auf CVD-Diamant	University of Ulm, 2002, Master Thesis	Thesis
2002	Zimmermann, Tom	Realisierung und Dimensionierung von GaN-HFETs mit Piezo-induziertem Kanal	University of Ulm, 2002, Master Thesis	Thesis
2001	Sönmez E, Abele P, Schad KB, Schumacher H	High power compact 16 GHz integrated oscillator design using active reactances	Solid-State Electronics 45 (2001) 1909-1913	Journal
2001	Shen, Yan	Design of RF-front end of GPS receiver in SiGe-HBT-technology	University of Ulm, 2001, Master Thesis	Thesis
2001	Denisenko A, Aleksov A, Kohn E	PH sensing by surface-doped diamond and effect of the diamond surface termination	Diamond & Related Materials 10 (2001) 667-672	Journal
2001	Löffler D, Wiesbeck W, Eube M, Schad KB, Ohnmacht E	Low cost conformal phased array antenna using high integrated SiGe-technology	Proc IEEE Antennas and Propagation Society International Symposium (AP-S 01), Boston, MA, USA, July 8-13, 2001, 334-337	Proceedings
2001	Adamschik M, Müller R, Gluche P, Flöter A, Limmer W, Sauer R, Kohn E	Analysis of piezoresistive properties of CVD-diamond sheets on silicon	Diamond & Related Materials 10 (2001) 1670-1675	Journal
2001	Kohn E, Ebert W, Adamschik M, Schmid P, Denisenko A	Diamond-based MEMS devices	New Diamond and Frontier Carbon Technology 11 (2001) 81-100	Journal
2001	Kohn E, Adamschik M, Schmid P, Denisenko A, Aleksov A, Ebert W	Prospects of diamond devices	Journal of Physics D: Applied Physics (2001) R77-R85	Journal
2001	Kohn E, Daumiller I, Kunze M, Seyboth M	InGaN-channel field-effect transistors - A case of polar heterojunctions	IWPSD, New Delhi, India, 2001	Proceedings
2001	Kohn E, Adamschik M, Schmid P, Ertl S, Flöter A	Diamond electro-mechanical micro devices - technology and performance	Diamond & Related Materials 10 (2001) 1684-1691	Journal
2001	Müller R, Adamschik M, Steidl D, Kohn E	Application of CVD-diamond for catheter ablation in the heart	Mikroelektroniktagung 2001, 2001	Proceedings
2001	Kohn E, Daumiller I, Neuburger M, Seyboth M, Kirchner C, Kamp M	InGaN-channel FETs - growth, technology and characteristics	Materials Research Society Symposium, 2001, vol. 680E	Proceedings
2001	Adamschik M, Hinz M, Maier C, Schmid P, Seliger H, Hofer EP, Kohn E	Diamond micro system for bio-chemistry	Diamond & Related Materials 10 (2001) 722-730	Journal
2001	Daumiller I, Theron D, Gaquière C, Vescan A, Dietrich R, Wieszt A, et al.	Current instabilities in GaN-based devices	IEEE Electron Device Letters 22 (2001) 62-64	Journal
2001	Müller R, Denisenko A, Adamschik M, Kohn E	On the ion-sensitivity of H-terminated surface channel devices on diamond	Diamond Conference, Budapest, Hungary, Oct 23, 2001	Proceedings
2001	Sönmez E, Abele P, Schad KB, Schumacher H	MMICs in the 20 GHz range using a commercially available SiGe foundry process	Microwaves and Optronics (MIOP), Stuttgart, Germany, May 8-10, 2001	Proceedings
2001	Sönmez E, Trasser A, Schad KB, Abele P, Schumacher H	High power ultra-compact VCO with active reactance concepts at 24 GHz	European Microwave Conference (EUMC/EMW), London, UK, Sep 24-28, 2001, 169-172	Proceedings
2001	Sönmez E, Abele P, Schad KB, Schumacher H	High power compact 16 GHz integrated oscillator design using active reactances	Solid State Electronics 45 (2001) 1909-1913	Journal
2001	Abele P, Vogelmann H, Sönmez E, Schad KB, Schumacher H	20mW SiGe-MMIC-VCO at 5GHz with integrated 4:1 divider for use in a PLL	SiRF Meeting (IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems), Ann Arbor, Michigan, USA, September 2001, 222-225	Proceedings
2001	Adamschik, Mario	Diamant in der Mikrosystemtechnik/ Schwerpunkt: Mikroreaktorsystem für biomedizinische Anwendungen	University of Ulm, 2001, PhD Thesis	Thesis
2001	Benkart, Peter	Entwurf eines 4-bit A/D Wandlers in Switched Current Technologie	University of Ulm, 2001, Student Thesis	Thesis
2001	Gottwald, Michael	Untersuchungen zum Einsatz offener thermischer Diamantaktoren für den Materialabtrag	University of Ulm, 2001, Master Thesis	Thesis
2001	Grobe, Dirk	Untersuchungen zum Einsatz von Diamant in Hochfrequenzanwendungen	University of Ulm, 2001, Master Thesis	Thesis
2001	Gudena, Tejeswara Rao	Charakterisierung von LNA-Entwürfen mit ACSYN in der Cadence Design-Umgebung	University of Ulm, 2001, Master Thesis	Thesis
2001	Hager, Thomas	Mischer- und Schalterkonzepte mit Si/SiGe-HFETs	University of Ulm, 2001, Master Thesis	Thesis
2001	Kromka, Alexander	3D packaging technology for silicon circuits	University of Ulm, 2001, Master Thesis	Thesis
2001	Kunze, Mike	Wachstum und Charakterisierung von nichtstöchiometrischem InP als Material für Dünnfilmtransistoren	University of Ulm, 2001, PhD Thesis	Thesis
2001	Kusterer, Joachim	Entwicklung, Herstellung und Charakterisierung von oberflächenmikromechanischen Diamantschaltern	University of Ulm, 2001, Master Thesis	Thesis
2001	Lee, Li-heng	Low temperature grown InP-based HFET characterization and modelling	University of Ulm, 2001, PhD Thesis	Thesis
2001	Müller, Andreas	Entwurf und Aufbau eines Power-LO bei 2.4 GHz in SiGe-HBT-Technologie für ISM-Anwendungen	University of Ulm, 2001, Student Thesis	Thesis
2001	Müller, Ralph	Entwicklung, Herstellung und Charakterisierung von pH-Sensoren auf CVD-Diamant	University of Ulm, 2001, Master Thesis	Thesis
2001	Neuburger, Martin	Herstellung und Charakterisierung von GaN-basierenden Heterostruktur-Feldeffektransistoren mit InGaN-Kanal	University of Ulm, 2001, Master Thesis	Thesis
2001	Romanyuk, Andriy	Fabrication and characterization of passivated AlGaN/GaN HEMTs	University of Ulm, 2001, Master Thesis	Thesis
2001	Shen, Yan	Entwurf eines Front-End-ICs in SiGe-Technologie	University of Ulm, 2001, Master Thesis	Thesis
2001	Stach, Martin Andreas	Entwicklung einer neuartigen, lithographischen Prozesstechnologie zur Herstellung 3-dimensionaler Strukturen für mikromechanische Bauelemente	University of Ulm, 2001, Student Thesis	Thesis
2001	Yousif, Farid	AlAs/InGaAs-RTDs auf InP und ihre Anwendungen in Triggerschaltungen und im mm-Wellenbereich	University of Ulm, 2001, PhD Thesis	Thesis
2001	Ziegler, Volker	Eine metamorphe Heterointegrations-Technologie für PIN Dioden und Heterostruktur-Feldeffekt-Transistoren zum Entwurf multifunktionaler koplanarer MMICs	University of Ulm, 2001, PhD Thesis	Thesis
2000	Aleksov A, Denisenko A, Kohn E	Prospects of bipolar diamond devices	Solid State Electronics 44 (2000) 369-375	Journal
2000	Höck G, Hackbarth T, Käb N, Herzog H-J, Enciso M, Aniel F, Crozat P, Adde R, Kohn E, König U	0.1 µm gate length p-type Ge/Si0,4Ge0,6 MODFET with 135 GHz fmax	Electronics Letters 36 (2000) 1428-1429	Journal
2000	Sönmez E, Abele P, Schad KB, Schumacher H	16 GHz integrated oscillator design with active elements in a production ready SiGe HBT MMIC technology	European Microwave Conference (EUMC/EMW), Paris, France, Oct 2-6, 2000	Proceedings
2000	Sönmez E, Dürr W, Abele P, Schad KB, Schumacher H	Parameter extraction of SiGe HBTs for a scalable MEXTRAM model and performance verification by a SiGe HBT MMIC active receive mixer design for 11 GHz	SiRF Meeting (IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems), Garmisch-Partenkirchen, Germany, April 26-28, 2000	Proceedings
2000	Sönmez E, Abele P, Schad KB, Schumacher H	High power compact 16 GHz integrated oscillator design using acitve reactances	Int Conference on Communications, Computers & Devices, Kharagpur, India, Dec 14-16, 2000	Proceedings
2000	Daumiller I, Kirchner C, Seyboth M, Kamp M, Kohn E	Demonstration of a GaN/InGaN HFET with high breakdown behaviour	6th Int Workshop on Wide Bandgap III-Nitrides, Richmond, Virginia, USA, March 2000, Abstract #38	Proceedings
2000	Daumiller I, Seyboth M, Kirchner C, Kamp M, Kohn E	GaN/InGaN/GaN heterostructure FET	58th Device Research Conference (DRC), Univ of Denver, Colorado, USA, June 2000	Proceedings
2000	Daumiller I, Kohn E	Instabilities of GaN-based HFETs	Next Generation mm-Wave Solid State Power Workshop, South Padre Island, Texas, USA, October 2000, Abstract Book, 11	Proceedings
2000	Abele P, Sönmez E, Schad KB, Schumacher H	24GHz SiGe-MMIC oscillator realized with lumped elements in a production line	European Microwave Conference (EUMC/EMW), Paris, France, Oct 2-6, 2000	Proceedings
2000	Abele P, Behammer D, Erben U, Meilchen M, Maier P, Schad KB, Sönmez E, Schumacher H	Si MMIC quadrature hybrid coupler for 1.35 GHz	SiRF Meeting (IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems), Garmisch-Partenkirchen, Germany, April 26-28, 2000, 83-86	Proceedings
2000	Adamschik M, Schmid P, Ertl S, Gluche P, Flöter A, Kohn E	Performance of high speed diamond micro switch	3rd Int Conference on Micro Materials (MicroMat), Berlin, Germany, April 17-19, 2000	Proceedings
2000	Adamschik M, Schmid P, Maier C, Hinz M, Seliger S, Hofer EP, Kohn E	Microdosage controlled micro reactor based on CVD-diamond	4th Int Conference on Microreaction Technology (IMRET4), Atlanta, GA, USA, March 5-9, 2000, Topical Conf Proc, 114	Proceedings
2000	Kohn E, Adamschik M, Kaiser A, Müller R, Schmid P, Denisenko A	Microsystems for biochemical applications based on CVD diamond	COMMAD 2000 Proceedings, 2000, 259-266	Proceedings
2000	Adamschik M, Hinz M , Maier C, Schmid P, Seliger H, Hofer EP, Kohn E	Diamond micro system for bio-chemistry	11th European Conference on Diamond, Diamond-Like Materials, Carbon Nanotubes, Nitrides & Silicon Carbide, Porto, Portugal, 2000	Proceedings
2000	Adamschik M, Müller R, Gluche P, Flöter A, Limmer W, Sauer R, Kohn E	Analysis of piezoresistive properties of CVD-diamond films on silicon	7th Int Conference on New Diamond Science and Technology (ICNDST-7), Univ of Hong Kong, P.R.China, July 23-28, 2000, Abstract	Proceedings
2000	Kohn E, Adamschik M, Schmid P, Ertl S, Flöter A	Diamond electro-mechanical micro devices-technology and performance	7th Int Conference on New Diamond Science and Technology (ICNDST-7), Univ of Hong Kong, P.R.China, July 23-28, 2000, Abstract	Proceedings
2000	Teppo T, Sönmez E, Schad KB, Abele P, Schumacher H	Si/SiGe ICs with low cost in the 15 to 20 GHz range	8th IEEE Int Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications (EDMO), Univ of Glasgow, Scotland, Nov 13-14, 2000, 26	Proceedings
2000	Schad KB, Erben U, Sönmez E, Abele P, Schumacher H	A Ku band SiGe low noise amplifier	SiRF Meeting (IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems), Garmisch-Partenkirchen, Germany, April 26-28, 2000	Proceedings
2000	Schumacher H, Abele P, Sönmez E, Schad KB, Teppo T, Schüppen A	Low-cost Ku to Ka band MMICs using a commercially available Si/SiGe HBT process	Asia-Pacific Microwave Conference (APMC), Sydney, Australia, Dec 3-6, 2000, 776	Proceedings
2000	Kohn E	High power/high temperature GaN devices	First Joint Symposium on Opto- & Microelectronic Devices and Circuits (SODC), Nanjing, P.R.China, 2000, 13-16	Proceedings
2000	Adamschik M, Schmid P, Ertl S, Ebert W, Käb N, Kohn E	CVD-diamond for high temperature MEMS applications - First example: Diamond micro switch	5th Int High Temperature Conference (HiTEC), Albuquerque, NM, USA, June 12-15, 2000, Abstract	Proceedings
2000	Gluche P, Flöter A, Ertl S, Rösch R, Lingenfelder C, Kohn E	Diamond for medical applications	High Care Int Congress, Bochum, Germany, February 2000	Proceedings
2000	Schmid P, Adamschik M, Ertl S, Kohn E	Modeling of high-speed diamond microswitch	Modeling and Simulation of Microsystems, San Diego, CA, USA, March 27-29, 2000, 237-240	Proceedings
2000	Kohn E, Flöter A	MEMS devices based on CVD-diamond-technology and application	The Physics Congress, Brighton, UK, March 27-30, 2000, Abstract	Proceedings
2000	Denisenko A, Aleksov A, Pribil A, Gluche P, Ebert W, Kohn E	Hypothesis on the conductivity mechanism in hydrogen terminated diamond films	Diamond & Related Materials 9 (2000) 1138-1142	Journal
2000	Aleksov A, Denisenko A, Käb N, Ebert W, Kohn E	Diamond power FET concept	2000 IEEE/Cornell Conference on High Performance Devices, Ithaca, NY, USA, 2000, 266-269	Proceedings
2000	Vescan A, Dietrich R, Wieszt A, Lee J-S, Schurr A, Leier H, Daumiller I, Käb N, Kohn E	Performance and limitations of AIGaN/GaN HFETs grown on saphire and SiC substrates	2000 IEEE/Cornell Conference on High Performance Devices, Ithaca, NY, USA, 2000, 247-256	Proceedings
2000	Gluche P, Flöter A, Ertl S, Rösch R, Lingenfelder C, Adamschik M, Dambacher J, Kusterer J, Kohn E, Spraul C, Lang GK, Thamasett S, Hombach V, Orth K, Birke J, Beger HG, Richter HP	CVD diamond and its application in medical technologies	3rd Int Conference on Micro Materials (MICROMAT), Berlin, Germany, April 17-19, 2000, Abstract Book, 118-119	Proceedings
2000	Schmid P, Adamschik M, Kohn E	Diamond electromechanical relay	HETECH Workshop, Günzburg, Germany, Sep 17-19, 2000, Abstract	Proceedings
2000	Kohn E, Daumiller I, Aleksov A, Denisenko A, Adamschik M, Ebert W, Schmid P	The use of widegap semiconductors GaN and diamond in electronics and microsystems	1st Conference on Microelectronics Microsystems Nanotechnology (MMN), Nov 20-22, 2000, Abstract Book, 16	Proceedings
2000	Denisenko A, Aleksov A, Daumiller I, Kohn E	PH sensors based on wide bandgap semiconductors	IEEE 58th Device Research Conference (DRC), Univ of Denver, USA, June 2000, Abstract Book, 75-76	Proceedings
2000	Schad KB, Schumacher H, Schüppen A	Low-power active mixer for Ku-band application using SiGe HBT MMIC technology	IEEE Radio Frequency Integrated Circuits (RFIC) Symposium, Boston, MA, USA, June 11-13, 2000, 263, 266	Proceedings
2000	Ziegler V, Gässler C, Wölk C, Deufel R, Berlec FJ, Dickmann J, Käb N, Schumacher H	Monolithic integration of metamorphic pin diodes and FETs for heterointegrated MMICs	European Microwave Week GaAs, Paris, France, Oct 2-6, 2000	Proceedings
2000	Pascht A, Kallfass I, Obergfell R, Berroth M	Variable gain SiGe HBT amplifier with low noise figure	8th IEEE Int Symposium on Electron Devices for Microwave and Optoelectronic Applications (EDMO), Glasgow, Scotland, November 2000	Proceedings
2000	Burkhardt, Ingo	Prototypische Implementierung eines drahtlosen Telematiksystems für Rettungsdienste	University of Ulm, 2000, Master Thesis	Thesis
2000	Ehler, Michael	Interactive internet connection for a remote digital signal processing lab	University of Ulm, 2000, Student Thesis	Thesis
2000	Gluche, Peter	Herstellung und Charakterisierung von Mikro-Sensoren und -Aktoren auf CVD Diamantschichten	University of Ulm, 2000, PhD Thesis	Thesis
2000	Grobe, Dirk	Untersuchungen zum Einsatz von Diamant in elektrischen Kontaktfedern	University of Ulm, 2000, Student Thesis	Thesis
2000	Grünenpütt, Jan Erik	Evaluierung metamorpher Heterostruktur-Feldeffekt-Transistoren	University of Ulm, 2000, Master Thesis	Thesis
2000	Kaiser, Alexander	Herstellung eines thermischen Diamantaktuators zur Mikrodosierung und Mischung zweier chemisch aggressiver Reaktanten zur Synthese von Oligonukleotidmolekülen	University of Ulm, 2000, Master Thesis	Thesis
2000	Kusterer, Joachim	Herstellung und Charakterisierung von Teststrukturen zur Untersuchung innerer Spannungen in CVD-Diamantschichten	University of Ulm, 2000, Student Thesis	Thesis
2000	Müller, Thomas	Entwurf und Aufbau von Komponenten für einen x-Band-Empfänger in SiGe HBT-Technologie	University of Ulm, 2000, Master Thesis	Thesis
2000	Neuburger, Martin	Simulation von GaN-basierenden HFETs	University of Ulm, 2000, Student Thesis	Thesis
2000	Schwörer, Christoph	Entwurf eines Frequenzaufbereitungs-ICs bei 10 GHz mit GaAs HBTs	University of Ulm, 2000, Master Thesis	Thesis
2000	Steidl, Dietmar	Entwicklung und Herstellung eines mikrocontrollerbasierten Meßgeräts mit GPIB-Bus-Schnittstelle zur Charakterisierung von elektrostatischen Mikrorelais	University of Ulm, 2000, Master Thesis	Thesis
2000	Vogelmann, Holger	Oszillatoren und Phasen-Regelkreise mit SiGe-HBTs für 5 GHz	University of Ulm, 2000, Master Thesis	Thesis
2000	Zimmermann, Tom	Herstellung und Charakterisierung ohmscher Kontakte auf dem Materialsystem InGaN und AlGaN	University of Ulm, 2000, Student Thesis	Thesis
2000	Aleksov A, Pribil A, Gluche P, Ebert W, Kohn E	Hypothesis on the conductivity mechanism in hydrogen terminated diamond films	Diamond & Related Materials 9 (2000) 1138-1142	Journal
2000	Ertl S, Adamschik M, Schmid P, Gluche P, Flöter A, Kohn E	Surface micromachined microswitch	Diamond & Related Materials 9 (2000) 970-974	Journal
2000	Ziegler V, Gässler C, Wölk C, Berlec FJ, Deufel R, Berg M, Dickmann J	InP-based and metamorphic devices for multifunctional MMICs in mm-wave communication systems	Proc 12th Indium Phosphide and Related Materials Conference (IPRM) 2000, pp 341-344	Proceedings
2000	Schmidt, Andrej	Entwicklung einer Feldplattentechnologie für Feldeffekttransistoren auf wasserstoffterminiertem Diamant mittels ALD Passivierung	University of Ulm, 2000, Student Thesis	Thesis
2000	Steidl, Dietmar	Einsatz von CVD-Diamantschichten in Herz-Ablationskathetern	University of Ulm, 2000, Student Thesis	Thesis
1999	Birk, Martin	Integrierte Pikosekunden-Zeitbereichsmeßtechnik auf Silizium	University of Ulm, 1999, PhD Thesis	Thesis
1999	Dambacher, Joachim	Untersuchungen zum Einsatz von Diamant für heizbare Mikroinstrumente	University of Ulm, 1999, Master Thesis	Thesis
1999	Ertl, Stephan	Untersuchungen an Diamantschichten bezüglich deren Einsatz für elektromechanische Anwendungen	University of Ulm, 1999, Master Thesis	Thesis
1999	Fritze, Stefan-Daniel	Evaluation reflektiver Phasenschieber für steuerbare Millimeterwellen-Antennen	University of Ulm, 1999, Master Thesis	Thesis
1999	Fritze, Stefan-Daniel	Charakterisierung von HF-Schaltern auf der Basis von Vanadium-Oxid	University of Ulm, 1999, Student Thesis	Thesis
1999	Glück, Markus	Herstellung von sub-um Si/SiGe Heterostrukturfeldeffekttransistoren (HFETs) und erste Testschaltungen für Hochfrequenzanwendungen	University of Ulm, 1999, PhD Thesis	Thesis
1999	Gossenberger, Andreas	Portierung eines Betriebssystems für ein microcontroller-gesteuertes Meßdatenerfassungssystem	University of Ulm, 1999, Student Thesis	Thesis
1999	Hager, Thomas	Entwurf und Herstellung eines Diamant-Mikroinjektionschips mit Mikroreaktor für die Automatisierung der Oligonucleotidsynthese	University of Ulm, 1999, Student Thesis	Thesis
1999	Helfenbein, Christian	Aufbau eines Nadelimpulsgenerators mit Vorverstärker für den Zeitbereichsmeßplatz	University of Ulm, 1999, Student Thesis	Thesis
1999	Helfenbein, Christian	Entwurf und Realisierung eines W-LAN Übertragungskanals im C-Band aus SiGe-MMICs	University of Ulm, 1999, Master Thesis	Thesis
1999	Häfele, Martin	Entwurf eines MMIC-Verstärkers mit veränderbarem Gewinn für das Frequenzband von 20 bis 40 GHz	University of Ulm, 1999, Master Thesis	Thesis
1999	Kaiser, Alexander	Entwurf, Herstellung und Charakterisierung einer Rückseitenkontaktierung für Diamantschichten auf Silizium	University of Ulm, 1999, Student Thesis	Thesis
1999	Kardosh, Ihab	Herstellung und Charakterisierung von Schottky-Dioden auf AlGaN	University of Ulm, 1999, Student Thesis	Thesis
1999	Maier, Peter	Technologische Optimierung der HF-Eigenschaften von passivierten SiGe- und SiGeC-Heterobipolartransistoren	University of Ulm, 1999, Master Thesis	Thesis
1999	Müller, Ralph	Entwicklung, Herstellung und Charakterisierung von Teststrukturen zur Untersuchung des piezoresistiven Effekts bei Diamantschichten auf Silizium in Abhängigkeit der Korngrenzenhäufigkeit	University of Ulm, 1999, Student Thesis	Thesis
1999	Müller, Thomas Johannes	Aufbau und Untersuchung eines auf SiGe HBT MMICs basierenden Image Rejection Mischers	University of Ulm, 1999, Student Thesis	Thesis
1999	Pribil, Andreas	Realisierung von Si-Kurzkanal-Feldeffekttransistoren	University of Ulm, 1999, Master Thesis	Thesis
1999	Stolz, Dietmar	Skalierung von n-Kanal MOS-Feldeffekttransistoren zur Anwendung in analogen ICs	University of Ulm, 1999, Master Thesis	Thesis
1999	Strobel, Eberhard	Passive GaAs-MMIC-Komponenten in Koplanartechnik	University of Ulm, 1999, Master Thesis	Thesis
1999	Würstle, Jochen	Untersuchungen über das Basisband-Rauschen von Empfangsmischern	University of Ulm, 1999, Master Thesis	Thesis
1999	Kohn E, Daumiller I, Schmid P, Nguyen NX, Nguyen CN	Large signal frequency dispersion of AIGaN/GaN heterostructure field effect transistors	Electronics Letters 35 (1999) 1022-1024	Journal
1999	Kunze M, Vescan A, Dollinger G, Bergmaier A, Kohn E	δ- doping in diamond	Carbon 37 (1999) 787-791	Journal
1999	Kunze M, Lee LH, Chung HY, Kohn E	First demonstration of low temperature grown InP-channel HFET transfered on to GaAs substrate	Solid State Electronics 43 (1999) 1535-1540	Journal
1999	Aleksov A, Denisenko A, Kohn E	Analysis of epitaxial boron/nitrogen doped pn junctions on diamond with the first application to pnp structures	Proceedings of the Applied Diamond Conference/Frontier Carbon Technology Joint Conference (ADC/FCT), Tsukuba, Japan, Aug 31-Sep 3, 1999, 138-143	Proceedings
1999	Daumiller I, Schmid P, Kohn E, Kirchner C, Kamp M, Ebeling KJ, Pond LL, Weitzel C	DC and RF characteristics of AIN/GaN doped channel heterostructure field effect transistors	Electronics Letters 35 (1999) 1588-1590	Journal
1999	Aleksov A, Denisenko A, Kohn E	First epitaxial pnp bipolar transistor on diamond with deep nitrogen donor	Electronics Letters 35 (1999) 1777-1779	Journal
1999	Kohn E, Daumiller I, Kunze M	FET devices on GaN and low temperature grown InP – Novel aspects and recent advances	Proceedings of the 10th International Workshop on the Physics of Semiconductor Devices (IWPSD), New Delhi, India, Dec 14-18, 1999, 497-504	Proceedings
1999	Schad KB, Abele P, Sönmez E, Schumacher H	SiGe HBT MMICs for frequencies above 5 GHz	IEEE MTT/ED Workshop on New Semiconductor Materials in Telecommunication and Microwave, St. Malo, France, Nov 18-19, 1999	Proceedings
1999	Kohn E, Daumiller I	High temperature performance of GaN-based HFETs	Proceedings of the GAAS 99, Munich, Germany, 1999, 240-245	Proceedings
1999	Daumiller I, Schmid P, Strobel E, Kohn E	How to explain the high breakdown voltages (>200V) in GaN-based HFET with high channel sheet charge (>1013cm-2)?	23th Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE) 99, Chantilly, France, May 1999, Abstract Book, 131-132	Proceedings
1999	Kohn E, Daumiller I, Nquyen NX	Instabilities in GaN-based HFETs	Workshop on Compound Semiconductor Microwave Materials and Devices 99 (WOCSEMMAD), New Orleans, USA, February 1999	Proceedings
1999	Daumiller I, Schmid P, Kohn E, Kirchner C, Kamp M, Ebeling KJ	Dispersion-free AlN/n-GaN HFET structure	Workshop on Compound Semiconductor Microwave Materials and Devices 99 (WOCSEMMAD), New Orleans, USA, February 1999	Proceedings
1999	Daumiller I, Schmid P, Kirchner C, Kamp M, Ebeling KJ, Pond LL, Weitzel C, Kohn E	DC and RF characterization of AlN/GaN HFETs	3rd International Conference on Nitride Semiconductors (ICNS3), Montpellier, France, July 1999, Paper WeMontpellier 10	Proceedings
1999	Daumiller I, Kirchner C, Kamp M, Ebeling KJ, Kohn E	Evaluation of the temperature stability of AlGaN/GaN heterostructure FETs	IEEE Electron Device Letters 20 (1999) 448-450	Journal
1999	Vescan A, Wieszt A, Dietrich R, Leier H, Käb N, Kohn E, Van Hove JM, Chow PP, Wochak AM	Single and double barrier AlGaN/GaN modulation doped field effect transistors grown by RF assisted MBE	23rd Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE) 99, Chantilly, France, May 1999, Abstract Book, 123-124	Proceedings
1999	Adamschik M, Ertl S, Schmid P, Kohn E	Electrostatic diamond micro switch	10th International Conference on Solid-State Sensors and Actuators, Transducers 99, 1999, Digest of Technical Papers, 1284-1287	Proceedings
1999	Adamschik M, Ebert W, Gluche P, Flöter A, Kohn E	The potential of CVD-diamond films for sensor & actuator applications	Proceedings of the 9th International Trade Fair and Conference for Sensors, Transducers & Systems, Nürnberg, Germany, May 18-20, 1999, 287-292	Proceedings
1999	Kohn E, Ebert W	Fabrication of advanced applications of electronic grade CVD–diamond	Asian Conference on Chemical Vapor Deposition, Shanghai, P.R.China, May 10-13, 1999, Book of Abstracts, 5a-2	Proceedings
1999	Schmid P, Adamschik M, Ertl S, Gluche P, Kohn E	Modeling approach for CVD-diamond based mechanical structures	Proceedings of the 2nd International Conference on Modeling and Simulation of Microsystems (MSM) 1999, Puerto Rico, USA, 1999, 636-639	Proceedings
1999	Aleksov A, Kunze M, Vescan A, Ebert W, Kohn E	Diamond epitaxy for electronic devices	41st Electronic Materials Conference (EMC), Santa Barbara, USA, June 30-July 2, 1999, Book of Abstracts, 19-20	Proceedings
1999	Aleksov A, Denisenko A, Kohn E	First vertical PNP bipolar transistor structure on diamond	57th Device Research Conference (DRC), Santa Barbara, USA, June 28-30, 1999, Book of Abstracts, 58-59	Proceedings
1999	Kohn E, Adamschik M, Ertl S, Schmid P, Ebert W	Elektromechanisches Mikrorelais auf Diamantbasis	VDE-Fachbericht Kontaktverhalten und Schalten 55 (1999) 91-96	Journal
1999	Schmid P, Adamschik M, Ertl S, Kohn E	Dynamic properties of diamond microswitches	Proceedings of the International Symposium on Dynamic Problems in Mechanics and Mechatronics, EURO Diname 99, Günzburg, Germany, 1999, 179-184	Proceedings
1999	Aleksov A, Denisenko A, Kohn E	PNP bipolar transistor on diamond using a nitrogen doped base	10th International Conference on Diamond, Diamond- Like Materials, Carbon Nanotubes, Nitrides&Silicon Carbide (Diamond 1999), Prague, Czech Republic, Sept 12-17, 1999, Poster 5.501	Proceedings
1999	Hofer EP, Maier C, Rembe C, aus der Wiesche S, Adamschik M, Gluche P, Flöter A, Kohn E	Realistic performance tests of a diamond printhead by high speed visualization	Proceedings of the International Conference on Digital Printing Technologies (IS&Ts NIP 15), Orlando, Florida, USA, Oct 17-22, 1999, 66-69	Proceedings
1999	Kohn E, Gluche P, Adamschik M	Diamond MEMS - a new emerging technology	Diamond & Related Materials 8 (1999) 934-940	Journal
1999	Schad K-B, Schumacher H, Schüppen A	Low-power active mixer for Ku-Band application using SiGe HBT MMIC technology	IEEE Radio Frequency Integrated Circuits (RFIC) Symposium, Boston, MA, USA, June 11-13, 1999	Proceedings
1999	Schumacher H, Erben U, Dürr W, Schad KB	Low-noise, low-power wireless frontend MMICs using SiGe HBTs	IEICE Transactions on Electronics E82-C (1999) 1943-1950	Journal
1999	Adamschik M, Gluche P, Flöter A, Ebert W, Kohn E	The potential of CVD-diamond films for sensor & actuator applications	Proceedings of the 9th International Trade Fair and Conference For Sensors, Transducers & Systems, Nürnberg, Germany, May 18-20, 1999, 287-292	Proceedings
1999	Schmid P, Adamschik M, Ertl S, Kohn E	Dynamic performance of diamond microswitches	Proceedings of the International Symposium on Dynamic Problems in Mechanics and Mechatronics, EURO Diname 99, Günzburg, Germany, 1999, 179-185	Proceedings
1999	Kohn E, Daumiller I, Schmid P, Nguyen NX, Nguyen CN	Large signal frequency dispersion of AIGaN/GaN heterostructure field effect transistors	Electronics Letters 35 (1999) 1022-1024	Journal
1999	Mizutani T, Takeyama T, Matsunami K, Kishimoto S, Maezawa K, Tomizawa M, Schmid P, Lipka KM, Kohn E	Observation of high field regions in GaAs MESFETs by using Kelvin probe force microscopy	Proceedings of the 11th International Conference on Indium Phosphide and Related Materials (IPRM), Davos, Switzerland, May 16-20, 1999, 451-454	Proceedings
1999	Aleksov A, Denisenko A, Käb N, Kohn E	Bipolar effects on diamond	Heterostructure Technology Workshop (HETECH) 1999, Lille, France, 1999, Abstract Book	Proceedings
1999	Schmid P, Denisenko A, Daumiller I, Kohn E	Thermal management of GaN-FETs	Heterostructure Technology Workshop (HETECH) 1999, Lille, France, 1999, Abstract Book	Proceedings
1999	Breitschädel O, Gräbeldinger H, Kuhn B, Scholz F, Walthes W, Berroth M, Daumiller I, Schad KB, Kohn E, Schweizer H	Short-channel AIGaNIGaN HEMTs with 70nm T-gate	Electronics Letters 35 (1999) 2018-2019	Journal
1999	Aleksov A, Vescan A, Kunze M, Gluche P, Ebert W, Kohn E, Bergmaier A, Dollinger G	Diamond junction FETs based on δ-doped channels	Diamond & Related Materials 8 (1999) 941-954	Journal
1999	Ebert W, Adamschik M, Gluche P, Flöter A, Kohn E	High-temperature diamond capacitor	Diamond & Related Materials 8 (1999) 1875-1877	Journal
1998	Abele, Peter	CAD-Modellierung der passiven Elemente eines SiGe-MMIC-Prozesses	University of Ulm, 1998, Master Thesis	Thesis
1998	Adamschik, Mario	Herstellung und Charakterisierung von Diamantsensoren zur Detektion mechanischer Größen	University of Ulm, 1998, Master Thesis	Thesis
1998	Binder, Matthias	Herstellung und Charakterisierung von hochtemperaturstabilen Schottky und Heteroübergängen auf alpha-SiC	University of Ulm, 1998, Master Thesis	Thesis
1998	Dambacher, Joachim	Zum Übertragungsverhalten von Quantentopf SiGe p-Kanal MOSFETs	University of Ulm, 1998, Student Thesis	Thesis
1998	Ehler, Ralph	Entwicklung eines Konzeptes für die telematische Fernnutzung elektronischer Meßplätze	University of Ulm, 1998, Master Thesis	Thesis
1998	Ertl, Stephan	Optimierung und Anwendung des reaktiven Ionenätzens auf polykristallinen Diamantschichten	University of Ulm, 1998, Student Thesis	Thesis
1998	Knödl, Thomas	Modellierung und Entwurf von AlGaAs/InGaAs-QW RCE-Photodetektoren	University of Ulm, 1998, Student Thesis	Thesis
1998	Kohn, Oliver	Herstellung und Charakterisierung von Diamantstrukturen zur Detektion von UV-Strahlung	University of Ulm, 1998, Master Thesis	Thesis
1998	Kuhrau, Heide	Simulation und Aufbau eines rauscharmen 10 GHz-Verstärkers mit einem Si/SiGe-HBT-MMIC	University of Ulm, 1998, Student Thesis	Thesis
1998	Leuner, Rüdiger	Optimierung von thermischen Mikroaktuatorstrukturen auf Diamantbasis	University of Ulm, 1998, Master Thesis	Thesis
1998	Pribil, Andreas	Untersuchungen an wasserstoffgesättigten Diamantoberflächen mit stabilen Ohmkontakten	University of Ulm, 1998, Student Thesis	Thesis
1998	Roscher, Hendrik	Eine neuartige polymerischer Verbindungstechnik und ihre Anwendung auf einen Abschwächer	University of Ulm, 1998, Student Thesis	Thesis
1998	Rupp, Andreas	Drain and Well Optimisation for 0.18 m CMOS	University of Ulm, 1998, Master Thesis	Thesis
1998	Rupp, Martin	Rechnergestützter optimierender Entwurf und Realisierung von nichtlinearen Leitungen zur Pulskompression	University of Ulm, 1998, Student Thesis	Thesis
1998	Schmid, Philipp	Modellierung von Dual-Gate-HFETs zur Verbesserung der maximalen Schwingfrequenz	University of Ulm, 1998, Master Thesis	Thesis
1998	Schnepp, Harald	Untersuchung von Grundstrukturen (Transkonduktoren, Gyratoren) integrierter aktiver Filter in Hinblick auf Dynamik und Leistungsaufnahme	University of Ulm, 1998, Master Thesis	Thesis
1998	Unold, Heiko	Automatisiertes C-U-Messsystem für Hochfrequenz- und quasistatische Messungen	University of Ulm, 1998, Student Thesis	Thesis
1998	Vescan, Andrei	Herstellung und Charakterisierung elektronischer Bauelemente auf bordotierten homoepitaktischen Diamantschichten	University of Ulm, 1998, PhD Thesis	Thesis
1998	Wieszt, Andreas	Herstellung und Charakterisierung von GaN-basierenden Heterostruktur-Feldeffekttransistoren	University of Ulm, 1998, Master Thesis	Thesis
1998	Würstle, Jochen	Untersuchungen über die Bor-Ausdiffusion aus der Basis bei SiGe-Heterobipolartransistoren	University of Ulm, 1998, Student Thesis	Thesis
1998	Gluche P, Leuner R, Vescan A, Ebert W, Kohn E, Rembe C, aus der Wiesche S, Hofer EP	Actuator–sensor technology on electronic grade diamond films	Microsystem Technologies 5 (1998) 38-43	Journal
1998	Gluche P, Leuner R, Rembe C, Aus der Wiesche S, Hofer EP, Kohn E	Novel thermal microactuator based on CVD-diamond films	IEEE International Electron Devices Meeting (IEDM), Technical Digest, San Francisco, CA, USA, Dec 6-9, 1998, 483-486	Proceedings
1998	Kohn E, Ebert W, Vescan A	Devices at high temperatures – Status and prospects	Israel Journal of Chemistry 38 (1998) 105-112	Journal
1998	Liberis J, Aninkevicius V, Matulioniene I, Matulionis A, Berntgen J, Henle B, Kohn E	Doping-dependent microwave noise in InP lattice-matched InGaAs channels	Lithuanian Journal of Physics 38 (1998) 401-408	Journal
1998	Warns C, Menzel W, Schumacher H	Transmission lines and passive elements for multilayer coplanar circuits on silicon	IEEE Transactions on Microwave Theory and Techniques 46 (1998) 616-622	Journal
1998	Dürr W, Erben U, Schüppen A, Dietrich H, Schumacher H	Investigation of microstrip and coplanar transmission lines on lossy silicon substrates without backside metallization	IEEE Transactions on Microwave Theory and Techniques 46 (1998) 712-715	Journal
1998	Bruce SPO, Rydberg A, Kim M, Beißwanger FJ, Luy J-F, Schumacher H, Erben U, Willander M, Karlsteen M	Design and realization of a millimeter-wave Si/SiGe HBT frequency multiplier	IEEE Transactions on Microwave Theory and Techniques 46 (1998) 695-700	Journal
1998	Birk M, Kibbel H, Warns C, Trasser A, Schumacher H	Efficient transient compression using an all-silicon nonlinear tranmission line	IEEE Microwave and Guided Wave Letters 8 (1998) 196-198	Journal
1998	Lee LH, Kunze M, Henle B, Kohn E	HF characteristics of InP-based HFETs grown at extremely low temperatures of 300°C and below	10th International Conference on Indium Phosphide and Related Materials (IPRM 1998), Tukuba, Ibaraki, Japan, May 11-15, 1998, 513-516	Proceedings
1998	Haas A, Schmid P, Kohn E	Dual-gate HEMTs with a closely spaced, floating second gate metalization: A first approach by 2D-simulation	22nd Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE 1998), Zeuthen, Germany, May 24-27, 1998, Book of Abstracts	Proceedings
1998	Gluche P, Kohn O, Ebert W, Nebel CE, Flöter A, Kohn E	High speed diamond DUV-detectors	56th Annual Device Research Conference (DRC), Charlottesville, VA, USA, June 22-24, 1998, pp 56-57	Proceedings
1998	Birk M, Kibbel H, Warns C, Trasser A, Schumacher H	Picosecond shock wave generation using an all-silicon nonlinear transmission line	56th Annual Device Research Conference (DRC), Charlottesville, VA, USA, June 22-24, 1998, Conf Digest, 90-91	Proceedings
1998	Daumiller I, Kirchner C, Kamp M, Ebeling KJ, Pond L, Weizel CE, Kohn E	Evaluation of AIGaN/GaN HEFTs up tp 750°C	56th Annual Device Research Conference (DRC), Charlottesville, VA, USA, June 22-24, 1998, Conf Digest, 114-115	Proceedings
1998	Glück M, Hackbarth T, Birk M, Haas A, Kohn E, König U	Design and fabrication of Si/SiGe n-type MODFETs	Physica E 2 (1998) 763-767	Journal
1998	Lipka KM, Schmid P, Birk M, Demmler M, Schneider J, Splingart B, Tasker PJ, Heinecke H, Kohn E	Novel concept for high level overdrive tolerance of GaAs based FETs	Microelectronics Reliability 38 (1998) 1795-1801	Journal
1998	Schüppen A, Dietrich H, Seiler U, von der Ropp H, Erben U	A SiGe RF technology for mobile communication systems	Microwave Engineering Europe, June 1998, 39-46	Proceedings
1998	Höck G, Glück M, Hackbarth T, Herzog HJ, Kohn E	Carrier mobilities in modulation doped Si1-XGeX heterostructures with respect to FET applications	Thin Solid Films 336 (1998) 141-144	Journal
1998	Kohn E, Gluche P, Adamschik M, Flöter A	Diamond sensor/actuator devices	9th Cimtec-World Ceramics Congress and Forum on New Materials, Florence, Italy, June 14-19, 1998, Proceedings of Topical Symposium IV: Diamond Films, 259-270	Proceedings
1998	Schmid P, Lipka KM, Ibbetson J, Nguyen N, Mishra U, Pond L, Weitzel C, Kohn E	High-temperature performance of GaAs-based HFET structure containing LT-AIGaAs and LT-GaAs	IEEE Electron Device Letters 19 (1998) 225-227	Journal
1998	Werner M, Gluche P, Adamschik M, Kohn E, Fecht J-F	Review on diamond based piezoresistive sensors	IEEE International Symposium on Industrial Electronics (ISIE 1998), Pretoria, South Africa, July 7-10, 1998, Proceedings, 147-152	Proceedings
1998	Erben U, Schumacher H, Schüppen A, Arndt J	Application of SiGe heterojunction bipolar transistors in 5.8 and 10GHz low-noise amplifiers	Electronics Letters 34 (1998) 1498-1500	Journal
1998	Birk M, Kibbel H, Schumacher H	Nonlinear transmission lines on silicon using optimized varactors	28th European Solid-State Device Research Conference (ESSDERC), Bordeaux, France, Sep 8-10, 1998, Proceedings, 516-519	Proceedings
1998	Kohn E, Gluche P, Adamschik M	Diamond MEMS – A new emerging technology	9th European Conference on Diamond, Diamond-Like Materials, Nitride and Silicon Carbide (Diamond 1998), Crete, Greece, Sep 13-18, 1998	Proceedings
1998	Aleksov A, Vescan A, Kunze M, Gluche P, Ebert W, Kohn E, Bergmaier A, Dollinger G	Diamond junction FETs based on δ-doped channels	9th European Conference on Diamond, Diamond-Like Materials, Nitride and Silicon Carbide (Diamond 1998), Crete, Greece, Sep 13-18, 1998	Proceedings
1998	Ebert W, Adamschik M, Gluche P, Flöter A, Kohn E	High-temperature diamond capacitor	9th European Conference on Diamond, Diamond-Like Materials, Nitride and Silicon Carbide (Diamond 1998), Crete, Greece, Sep 13-18, 1998	Proceedings
1998	Höck G, Hackbarth T, Erben U, Kohn E, König U	High performance 0,25µm p-type Ge/SiGe MODFETs	Electronics Letters 34 (1998) 1888-1889	Journal
1998	Birk M, Kibbel H, Rupp M, Schumacher H	All-silicon nonlinear transmission line using optimized Schottky diodes	IEEE MTT-S: Silicon Monolithic Integrated Circuits in RF Systems Symposium, Ann Arbor, MI, USA, Sep 17-18, 1998, Proceedings, 61-66	Proceedings
1998	Erben U, Schumacher H, Schüppen A, Dietrich H, Arndt J	Application of a production ready SiGe HBT process to 1.9, 5.7 and 10 GHz low noise MMICs	IEEE MTT-S: Silicon Monolithic Integrated Circuits in RF Systems Symposium, Ann Arbor, MI, USA, Sep 17-18, 1998, Proceedings, 100-104	Proceedings
1998	Erben U, Abele P, Behammer D, Erzgräber H, Schumacher H	High-Q inductors on silicon using a quasi thin film microstrip technique	IEEE MTT-S: Silicon Monolithic Integrated Circuits in RF Systems Symposium, Ann Arbor, MI, USA, Sep 17-18, 1998, Proceedings, 155-159	Proceedings
1998	Birk M, Kibbel H, Warns C, Trasser A, Schumacher H	All-silicon nonlinear transmission line	43rd International Scientific Colloquium, Ilmenau, Germany, Sep 21-24, 1998	Proceedings
1998	Birk M, Ehler R, Schumacher H	A laboratory information management system using open internet standards	In: Technologies for the Information Society: Developments and Opportunities. IOS Press Amsterdam 1998 (1998) 316-323	Journal
1998	Trasser A, Buck M, Birk M, Schumacher H	A novel fully automated web server for weather satellite images	In: Technologies for the Information Society: Developments and Opportunities. IOS Press Amsterdam 1998 (1998) 287-293	Journal
1998	Schumacher H, Birk M	Guided internet tours: Using web-based knowledge in a contextualized, validated educational enviroment	In: Technologies for the Information Society: Developments and Opportunities. IOS Press Amsterdam 1998 (1998) 257-263	Journal
1998	Dürr W, Erben U, Schüppen A, Dietrich H, Schumacher H	Low-power low-noise active mixers for 5.7 and 11.2 GHz using commercially available SiGe HBT MMIC technology	Electronics Letters 34 (1998) 1194-1196	Journal
1998	Gluche P, Leuner R, Kohn E, Rembe C, Aus der Wiesche S, Hofer EP	Novel thermal microactuator based on CVD-diamond films	IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA, Dec 6-9, 1998, Technical Digest, 483-486	Proceedings
1998	Gluche P, Adamschik A, Vescan A, Ebert W, Flöter A, Zachai R, Kohn E	Application of highly oriented, planar diamond (HOD) films of mechanical strength in sensor technologies	Diamond & Related Materials 7 (1998) 779-782	Journal
1998	Vescan A, Daumiller I, Gluche P, Ebert W, Kohn E	High temperature, high voltage operation of diamond Schottky diode	Diamond & Related Materials 7 (1998) 581-584	Journal
1998	Vescan A, Daumiller I, Gluche P, Ebert W, Kohn E	Very high temperature operation of diamond Schottky diode	IEEE Electron Device Letters 18 (1998) 556-558	Journal
1998	Gluche P, Leuner R, Vescan A, Ebert W, Kohn E, Rembe C, Aus der Wiesche S, Hofer EP	Actuator-sensor technology on electronic grade diamond films	Microsystems Technologies 5 (1998) 38-43	Journal
1998	Kohn E, Ebert W	Electronic devices on CVD diamond	In: B. Dischler, C. Wild (eds): Low-pressure synthetic diamond. Manufacturing and applications, Springer Berlin, Germany, 1998, 331-359	Book (Chapter in Book)
1998	Daumiller I, Kirschner C, Kamp M, Ebeling KJ, Kohn E	Technology and electrical characterization of AlGaN/GaN HFETs	22nd Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE), Zeuthen, Germany, May 24-27, 1998, Book of Abstracts, 118-119	Proceedings
1998	Daumiller I, Kirschner C, Kamp M, Ebeling KJ, Off J, Scholz F, Kohn E	Materials requirements for high temperature GaN based heterojunction FETs	European Materials Research Society Meeting (E-MRS'98), Strasbourg, France, 1998, Abstracts, L-19	Proceedings
1998	Kunze M, Vescan A, Gluche P, Ebert W, Kohn E	Delta-doping in diamond	European Materials Research Society Meeting (E-MRS'98), Strasbourg, France, 1998, Abstracts, K-8	Proceedings
1998	Daumiller I, Kirschner C, Kamp M, Ebeling KJ, Pond L, Weitzel CE, Kohn E	Device performance of AlGaN/GaN FETs at elevated temperature	3rd European GaN Workshop, Warsaw, Poland, 1998, Abstracts	Proceedings
1998	Kunze M, Lee LH, Chung HY, Kohn E	Demonstration of low temperature grown InP-channel HFET transferred onto GaAs substrate	Topical Workshop on Heterostructure Microelectronics for Information Systems Applications (TWHM-ISA ’98), Kanagawa, Japan, August 1998, Proceedings, 72-73	Proceedings
1998	Matsunami K, Usunami T, Kishimoto S, Maetzawa K, Mizutani T, Schmid P, Lipka KM, Kohn E	Potential profile measurement of MESFETs passivated with low-temperature grown GaAs layer by Kelvin probe force microscopy	Topical Workshop on Heterostructure Microelectronics for Information Systems Applications (TWHM-ISA ‘98), Kanagawa, Japan, August 1998, Proceedings, 76-77	Proceedings
1998	Hofer EP, Maier C, Rembe C, Aus der Wiesche S, Kohn E, Adamschik M, Gluche P	A new diamond micro heater for inkjet print heads	14th International Conference on Digital Printing Technologies (IS&T's NIP 14), 1998, Proceedings, 72-75	Proceedings
1998	Hofer EP, Aus der Wiesche S, Rembe C, Patzer J, Gluche P, Leuner R, Kohn E	The diamond ink jet	International Symposium on Electronic Imaging: Processing and Printing in Colour, Zürich, Switzerland, May 1998, SPIE vol. 3409, 306-309	Proceedings
1998	Kunze M, Henle B, Chung HY, Kohn E	First low temperature grown InP-channel HFET on GaAs substrate	22nd Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE), Zeuthen, Germany, May 24-27, 1998, Abstracts, 63-64	Proceedings
1998	Daumiller I, Kirchner C, Kamp M, Ebeling KJ, Kohn E	Technology and electrical characterization of AlGaN/GaN HFETs	22nd Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE), Zeuthen, Germany, May 24-27, 1998, Abstracts, 118-119	Proceedings
1998	Flöter A, Güttler H, Schulz G, Baumann R, Lutz-Elsner C, Zachai R, Gluche P, Adamschik M, Aleksov A, Kohn O, Ebert W, Kohn E, Nebel CE, Rohrer E	Properties of thin highly oriented diamond films and their use in electronic applications	2nd International Symposium on Diamond Electronic Devices (ISDED-2), Osaka, Japan, March 1998, Abstracts	Proceedings
1998	Adamschik M, Gluche P, Flöter A, Ebert W, Fecht HJ, Szucs F, Marti O, Barenz J, Kohn E	Advanced piezoresistive sensor applications of electronic grade diamond films	8th European Heterostructure Technology Workshop (HETECH), September 1998, Abstracts	Proceedings
1998	Höck G, Hackbarth T, Erben U, König U, Kohn E	DC and RF performance of p-type Ge/SiGe MODFETs	8th European Heterostructure Technology Workshop (HETECH), September 1998, Abstracts	Proceedings
1998	Kohn E	LT-GaAs in FET devices	Symposium on Non-Stoichiometric III-V Compounds, Erlangen, Germany, October 1998, Abstracts, 40	Proceedings
1998	Kunze M, Lee LH, Chung HY, Kohn E	LT-InP and device applications	Physik Mikrostrukturierter Halbleiter 6 (1998) 105-112	Journal
1998	Schumacher H	SiGe HBTs in low-noise frontends in the 2-12 GHz range	Asia-Pacific Microwave Conference, Workshop on Emerging Technologies, Yokohama, Japan, Dec 7-11, 1998	Proceedings
1998	Ziegler V, Berg M, Tobler H, Wölk C, Deufel R, Dickmann J, Trasser A, Schumacher H, Alekseev E, Pavlichis D	InGaAs/InP pindiode switches for very high frequency applications	ESA Workshop on Millimetre Wave Technology and Applications, Espoo, Finland, May 27-29, 1998	Proceedings
1998	Ziegler V, Berg M, Tobler H, Wölk C, Deufel R, Dickmann J, Trasser A, Schumacher H, Alekseev E, Pavlichis D	InP-based monolithic integrated pin diode switches for mm-wave applications	European Microwave Conference, Amsterdam, The Netherlands, October 5-9, 1998	Proceedings
1998	Bruce SPO, Rydberg A, Kim M, Beißwanger F, Lag JF, Schumacher H, Erben U, Willander M, Karlsteen M	Design and realization of a millimeter-wave Si/SiGe HBT frequency multiplier	IEEE Transactions on Microwave Theory and Techniques 46 (1998) 695-700	Journal
1997	Aleksov, Aleksandar	Untersuchungen an wasserstoffgesättigten Diamantoberflächen für elektronische Bauelemente	University of Ulm, 1997, Master Thesis	Thesis
1997	Adamschik, Mario	Untersuchung der mechanischen und piezoresistiven Eigenschaften polykristalliner Diamantschichten	University of Ulm, 1997, Student Thesis	Thesis
1997	Aleksov, Aleksandar	Anreicherungstyp-MESFET auf Diamant	University of Ulm, 1997, Student Thesis	Thesis
1997	Aleksov, Aleksandar	Untersuchungen an wasserstoffgesättigten Diamantoberflächen für elektronische Bauelemente	University of Ulm, 1997, Master Thesis	Thesis
1997	Benedikt, Johannes	Aufbau und Inbetriebnahme einer Empfängerkette einer drahtlosen Datenübertragungsstrecke mit SiGe-HBTs bei einer Frequenz von 5,8 GHz	University of Ulm, 1997, Master Thesis	Thesis
1997	Binder, Matthias	Polykristalliner Diamant als Material für Strahlungsdetektion	University of Ulm, 1997, Student Thesis	Thesis
1997	Buck, Martin	Entwicklung einer elektronisch steuerbaren Impedance für einen Rauschmeßplatz	University of Ulm, 1997, Student Thesis	Thesis
1997	Buck, Martin	Meteosatdekoder fuer WEFAX-Aussendungen und Bereitstellung der Daten ueber das Uninetzwerk	University of Ulm, 1997, Master Thesis	Thesis
1997	Carrier, Christophe	Hochfrequenzverhalten von Schottky-Dioden in Abhängigkeit von der Dotierungsverteilung	University of Ulm, 1997, Master Thesis	Thesis
1997	Daumiller, Ingo	Herstellung und Charakterisierung hochtemperaturstabiler, Si-basierender Schottky-Kontakte auf Diamant	University of Ulm, 1997, Master Thesis	Thesis
1997	Ecker, Irene	Anisotropes Ätzen von einkristallinem Silizium in alkalischen Lösungen	University of Ulm, 1997, Student Thesis	Thesis
1997	Ehler, Ralph	Hypermediale Meßdatenverwaltung über WWW	University of Ulm, 1997, Student Thesis	Thesis
1997	Fratianu, Elmar	Elektrische Modellierung von SiGe HBTs unter Einschluß des Rauschverhaltens, für die Anwendung im Millimeterwellengebiet	University of Ulm, 1997, Master Thesis	Thesis
1997	Graf, Jürgen	Einfluß der Wachstumsparameter auf die Kontaktschicht von Niedertemperatur-InP mit AlInAs-Heterobarriere	University of Ulm, 1997, Student Thesis	Thesis
1997	Gässler, Christoph Matthias	Herstellung und Charakterisierung von Heterobipolartransistoren auf InP-Substrat	University of Ulm, 1997, Master Thesis	Thesis
1997	Henle, Bernd	Wachstum nichtstöchiometrischer Epitaxieschichten auf InP-Basis für FET-Anwendungen	University of Ulm, 1997, PhD Thesis	Thesis
1997	Häfele, Martin	Charakterisierung von coplanaren Wellenleitern mit Taper	University of Ulm, 1997, Student Thesis	Thesis
1997	Kohn, Oliver	UV-Strahlungsdetektion mit Diamantsensoren	University of Ulm, 1997, Student Thesis	Thesis
1997	Kunze, Mike	Optimierung pulsdotierter Diamantschichten	University of Ulm, 1997, Master Thesis	Thesis
1997	Köhler, Bernd	Aufbau und Inbetriebnahme eines Rauschmeßplatzes für den Frequenzbereich von 0,5 - 2,5 GHz	University of Ulm, 1997, Master Thesis	Thesis
1997	Leuner, Rüdiger	Mikroheizelemente und Temperatursensoren auf CVD-Diamantschichten	University of Ulm, 1997, Student Thesis	Thesis
1997	Link, Jürgen	Untersuchungen zur Implantations-induzierten Bordiffusion in der Basis von SiGe HBTs	University of Ulm, 1997, Student Thesis	Thesis
1997	Link, Jürgen	Passive Bauelemente für die Mehrlagenverdrahtung bei SiGe ICs	University of Ulm, 1997, Master Thesis	Thesis
1997	Mederer, Felix	Ätzratenbestimmung und Oberflächenanalyse von LTG InP und AlInAs	University of Ulm, 1997, Student Thesis	Thesis
1997	Munz, Michael	Charakterisierung eines Waferprozesses für einen mikromechanischen Drehratensensor anhand von Testmustern	University of Ulm, 1997, Master Thesis	Thesis
1997	Munz, Michael	Elektrische Charakterisierung pulsdotierter Diamantschichten	University of Ulm, 1997, Student Thesis	Thesis
1997	Raab, Jörg	Extraktion der Parameter für das MEXTRAM-Modell zur Verwendung von Si/SiGe HBTs	University of Ulm, 1997, Student Thesis	Thesis
1997	Rupp, Andreas	Elektronisch steuerbare Anpaßschaltung	University of Ulm, 1997, Student Thesis	Thesis
1997	Schad, Kai-Boris	Aufbau und Inbetriebnahme eines Sendekanals für eine drahtlose Datenübertragungsstrecke bei 5,8 GHz	University of Ulm, 1997, Master Thesis	Thesis
1997	Schmid, Philipp	Charakterisierung von GaAs FETs mit Oberflächenpassivierungsschichten geringer Leitfähigkeit	University of Ulm, 1997, Student Thesis	Thesis
1997	Schnepp, Harald	Entwurf eines spannungsgesteuerten Oszillators mit SiGe-HBTs für eine Frequenz von 5,7 GHz	University of Ulm, 1997, Student Thesis	Thesis
1997	Stolz, Dietmar	Variables Dämpfungsglied mit PIN-Dioden	University of Ulm, 1997, Student Thesis	Thesis
1997	Strobel, Eberhard	Modell eines kantengekoppelten InP-InGaAs-Photo-Heterobipolartransistors	University of Ulm, 1997, Student Thesis	Thesis
1997	Wieszt, Andreas	Stabilitätsbetrachtung eines Laser-Radar-Systems für Flüssigkeitsstände	University of Ulm, 1997, Student Thesis	Thesis
1997	Ziegler, Volker	Mikrowellen-PIN-Dioden-Schalter für die InP-Heterointegration	University of Ulm, 1997, Master Thesis	Thesis
1997	Bruce S, Trasser A, Birk M, Rydberg A, Schumacher H	Extraction of thermal time constant in HBTs using small signal measurements	Electronics Letters 33 (1997) 165-167	Journal
1997	Herzel F, Schley P, Heinemann B, Zillmann U, Knoll D, Temmler D, Erben U	Experimental verification and numerical application of the thermodynamic approach to high-frequency noise in SiGe HBTs	Solid-State Electronics 41 (1997) (387-390)	Journal
1997	Vescan A, Gluche P, Ebert W, Kohn E	High-temperature, high-voltage operation of pulse-doped diamond MESFET	IEEE Electron Device Letters 18 (1997) 222-224	Journal
1997	Gluche P, Aleksov A, Vescan A, Ebert W, Kohn E	Diamond surface-channel FET with 200 V breakdown voltage	IEEE Electron Device Letters 18 (1997) 547-549	Journal
1997	Vescan A, Daumiller I, Gluche P, Ebert W, Kohn E	Very high temperature operation of diamond Schottky diode	IEEE Electron Device Letters 18 (1997) 556-558	Journal
1997	Long W, Lee L, Kohn E, Chin K	Analytical modeling of dual-gate HFETs	IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems 16 (1997) 1409-1417	Journal
1997	Lipka M, Weigl B, Ebeling KJ, Kohn E	Al-Oxide GaAs MOSFET structure with high current density and breakdown voltage	Workshop on Native Oxides of Compound Semiconductors, San Antonio, TX, USA, Feb 21-22, 1997	Proceedings
1997	Gluche P, Leuner R, Vescan A, Ebert W, Rembe C, aus der Wiesche S, Hofer EP, Kohn E	Actuator/sensor technology on	International Conference and Exhibition Micro Materials 97, Berlin, Germany, 16-18 April, 1997, 573-576	Proceedings
1997	Henle B, Lipka M, Kohn E	InP based FET structure grown and processed at extremely low temperatures of 280°C	9th Int Conf on Indium Phosphide and Related Materials (IPRM), Hyannis, MA, USA, May 11-15, 1997	Proceedings
1997	Van Haaren B, Fratianu E, Regis M, Plana R, Llopis O, Gruhle A, Schumacher H, Graffeuil J	Bruit basse fréquence et performances en bruit de phase de transistors bipolaires a hétérojonction	Silicium/Silicium-Germanium/Silicium Journées Nationales Micro-Ondes, St. Malo, France, May 21-23, 1997	Proceedings
1997	Gluche P, Aleksov A, Vescan A, Ebert W, Kohn E	A technical approach towards diamond power transistors	21st Wkshp. on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE), Scheveningen, The Netherlands, May 25-28, 1997, 93	Proceedings
1997	Henle B, Kohn E	InP based HFET structure grown and processed at very low temperatures below 300°C	55th Device Research Conference (DRC), Fort Collins, CO, USA, June 23-25, 1997, 74-75	Proceedings
1997	Vescan A, Daumiller I, Gluche P, Ebert W, Kohn E	1000°C operation of diamond Schottky diode	55th Device Research Conference (DRC), Fort Collins, CO, USA, June 23-25, 1997, 40-41	Proceedings
1997	Gluche P, Aleksov A, Vescan A, Ebert W, Kohn E	First diamond power FET structure	55th Device Research Conference (DRC), Fort Collins, CO, USA, June 23-25, 1997, 42-43	Proceedings
1997	Aninkevicius V, Liberis J, Matulioniene I, Matulionis A, Sakalas P, Henle B, Kohn E, Berntgen J	Hot-electron noise in InAlAs/InGaAs/InAlAs quantum wells	14th International Conference on Noise in Physical Systems and 1/f Fluctuations (ICNF), Leuven, Belgium, July 14-18, 1997, 71-74	Proceedings
1997	Gluche P, Adamschik M, Vescan A, Ebert W, Szücs F, Fecht HJ, Flöter A, Zachai R, Kohn E	Application of highly oriented, planar diamond (HOD) films of high mechanical strength in sensor technologies	8th European Conf. on Diamond, Diamond-Like & Related Materials (Diamond Films '97), Edinburgh, Scotland, Aug 3-8, 1997, 779-782	Proceedings
1997	Vescan A, Daumiller I, Gluche P, Ebert W, Kohn E	High temperature, high voltage operation of diamond Schottky diode	8th European Conf. on Diamond, Diamond-Like & Related Materials (Diamond Films '97), Edinburgh, Scotland, Aug 3-8, 1997, 581-584	Proceedings
1997	Gluche P, Kohn O, Binder M, Ebert W, Vescan A, Rohrer E, Nebel CE, Kohn E	High speed diamond DUV-detector	16th IEEE/Cornell Conference on Advanced Concepts in High-Speed Semiconductor Devices & Circuits, Ithaca, NY, USA, Aug 6-8, 1997, 314-321	Proceedings
1997	Daumiller I, Vescan A, Heinle U, Scholz F, Kohn E	On the reverse IV-characteristics of Schottky diodes on n-GaN	16th IEEE/Cornell Conference on Advanced Concepts in High-Speed Semiconductor Devices & Circuits, Ithaca, NY, USA, Aug 6-8, 1997, 227-235	Proceedings
1997	Kohn E, Gluche P	Electronic and sensor applications of semiconducting CVD diamond films	1997 Joint International Meeting ECS/ISE, Paris, France, Aug 31-Sep 5, 1997, 482-490	Proceedings
1997	Lipka KM, Schmid P, Nguyen N, Pond LL, Weitzel CE,Mishra U, Kohn E	500°C operation of GaAs based HFET containing low temperature grown GaAs and AlGaAs	24th International Symposium on Compound Semiconductors (ISCS), San Diego, CA, USA, Sep 8-11, 1997	Proceedings
1997	Erben U, Schüppen S, Dietrich H, Schumacher H	Low-noise amplifier for mobile communications using a production ready SiGe HBT technology	27th European Solid-State Device Research Conference (ESSDERC '97), Stuttgart, Germany, Sep 22-24, 1997, 352-355	Proceedings
1997	Lipka KM, Schmid P, Birk M, Demmler M, Schneider J, Splingart B, Tasker PJ, Heinecke H, Kohn E	Novel concept for high level overdrive tolerance of GaAs based FETs	19th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD), Santa Clara, CA, USA, Sep 23-25, 1997, 1795-1801	Proceedings
1997	Schumacher H, Erben U, Dürr W	SiGe heterojunction bipolar transistors - the noise perspective	Topical Workshop on Heterostructure Microelectronics (TWHM '96), Sapporo, Japan, Aug 18-21, 1996, 32-33	Proceedings
1997	Kohn E	Layers and heterostructures for high temperature devices	3rd International Workshop on Heterostructure Epitaxy and Devices (HEAD '97), Bratislava, Slovakia, Oct 12-16, 1997, 189-198	Proceedings
1997	Henle B, Kohn E	AlInAs/InP heterostructures for FET application grown at low temperatures	3rd International Workshop on Heterostructure Epitaxy and Devices (HEAD '97), Bratislava, Slovakia, Oct 12-16, 1997, 259-262	Proceedings
1997	Ostermann T, Glück M, Hagelauer R, König U, Dobersberger M, Birk M, Oehler F	Inverter circuits with Si/SiGe n-type MODFETs	International Semiconductor Device Research Symposium (ISDRS), Charlottesville, VA, USA, Dec 10-13, 1997, 327-330	Proceedings
1996	Benedikt, Johannes	Evaluation and measurement enhancement of the high frequency measurement system at the University of Wales College of Cardiff	University of Ulm, 1996, Student Thesis	Thesis
1996	Bülow, Oliver	Entwurf von Klasse-C Verstärkern für maximale Ausgangsleistung	University of Ulm, 1996, Student Thesis	Thesis
1996	Deichsel, Eckard	Die Auswirkung der neutralen Basisrekombination auf die Earlyspannung in Si/SiGe HBTs	University of Ulm, 1996, Student Thesis	Thesis
1996	Doser, Wolfgang	Passivierte SiGe Heterobipolartransistoren	University of Ulm, 1996, Master Thesis	Thesis
1996	Ellinger, Frank	Untersuchung von Verstärkern mit Si/SiGe Heterostrukturbipolartransistoren auf Power Added Efficiency	University of Ulm, 1996, Master Thesis	Thesis
1996	Geiger, Dietmar	Optimierung von Heterostruktur-Feldeffekttransistoren auf GaAs Basis für Leistungsanwendungen im Millimeterwellen-Bereich	University of Ulm, 1996, PhD Thesis	Thesis
1996	Gluche, Peter	Herstellung und Charakterisierung Si-basierender Metall-Halbleiter-Kontakte für die Hochtemperaturmikroelektronik auf Diamant	University of Ulm, 1996, Master Thesis	Thesis
1996	Götzfried, Rainer	Si/SiGe-HBTs in Sende-Empfangsumschaltern im Mobilfunk	University of Ulm, 1996, Master Thesis	Thesis
1996	Götzfried, Thomas	Entwurf und Optimierung eines phasenrauscharmen spannungsgesteuerten Oszillators bei 1 GHz	University of Ulm, 1996, Master Thesis	Thesis
1996	Haas, Arndt	Charakterisierung von Si/SiGe Hetero-FETs fuer Mikrowellenanwendungen	University of Ulm, 1996, Master Thesis	Thesis
1996	Heinle, Ulrich	Herstellung und Charakterisierung von sperrenden und nicht-sperrenden Kontakten auf Galliumnitrid	University of Ulm, 1996, Master Thesis	Thesis
1996	Hepp, Christoph	Breitbandiger optischer Empfänger für LIDAR	University of Ulm, 1996, Master Thesis	Thesis
1996	Hilsenbeck, Jochen	Optimierung, Herstellung und Charakterisierung von GaInP/InGaAs/GaAs-MODFET's	University of Ulm, 1996, Master Thesis	Thesis
1996	Hofer, Bernhard	Herstellung und Charakterisierung von GaAs-Leistungsfeldeffekttransistoren mit verschiedenen Recesskonfigurationen	University of Ulm, 1996, Master Thesis	Thesis
1996	Klaiber, Martin	Integration einer Zweitor-Kalibration für einen schnellen Impulsmeßplatz	University of Ulm, 1996, Student Thesis	Thesis
1996	Lipka, Klaus-Michael	Niedertemperatur-Gallium-Arsenid-Hetero-Feld-Effekt-Transistor	University of Ulm, 1996, PhD Thesis	Thesis
1996	Mönch, Udo	Anodische Oxidation von Silizium	University of Ulm, 1996, Student Thesis	Thesis
1996	Pfau, Jürgen	Elektronisch steuerbare Anpaßschaltung für einen Leistungsmeßplatz	University of Ulm, 1996, Master Thesis	Thesis
1996	Raab, Gerlinde	Untersuchung von Niedertemperatur-Gateoxiden in Si/SiGe n-Kanal MODFETs	University of Ulm, 1996, Student Thesis	Thesis
1996	Reitemann, Günter	Untersuchung von InP-HEMTs mit neuartigen InGaAs/InP-Kanal	University of Ulm, 1996, Master Thesis	Thesis
1996	Richter, Thomas	Artificial Dielectrica: Optical Properties of LTG-GaAs layers and Si-Cluster on glass	University of Ulm, 1996, Master Thesis	Thesis
1996	Schiehlen, Eckart	Aufbau eines computergesteuerten Meßdatenerfassungssystems zur Charakterisierung elektronischer Bauelemente	University of Ulm, 1996, Student Thesis	Thesis
1996	Schneider, Jürgen	Elektrothermische Modellierung und Charakterisierung von Leistungs-Heterostruktur-Bipolartransistoren	University of Ulm, 1996, PhD Thesis	Thesis
1996	Schwermann, Uwe	Elektronische Integration mit leitenden polymeren Materialien	University of Ulm, 1996, Master Thesis	Thesis
1996	Schäuble, Philipp	Reaktives Ionenätzen von Diamant	University of Ulm, 1996, Student Thesis	Thesis
1996	Steidle, Thomas	Entwurf und Aufbau eines IEC-Bus gesteuerten Netzgerätes	University of Ulm, 1996, Master Thesis	Thesis
1996	Strähle, Silvia	Entwurf und Technologie von Heterostrukturfeldeffekttransistoren auf InP-Basis mit hohem Verstärkungsbandbreiteprodukt bei hoher Leistungsverstärkung	University of Ulm, 1996, PhD Thesis	Thesis
1996	Suckel, Henning	Herstellung und Funktionsnachweis von Transistorteststrukturen aus CVD-Diamant	University of Ulm, 1996, Master Thesis	Thesis
1996	Zick, Werner	Aktive Induktivitäten für Mikrowellenfrequenzen	University of Ulm, 1996, Student Thesis	Thesis
1996	Koenig E, Schneider J, Seiler U, Erben U, Schumacher H	Current-temperature feedback effects in III-V heterojunction bipolar transistors	IEEE Journal of Solid State Circuits 31 (1996) 122-127	Journal
1996	Strähle S, Henle B, Lee L, Künzel H, Hackbarth T, Dickmann J, Kohn E	Microwave performance of InP-based HEMTs for low-voltage application	Microwave and Optical Technology Letters 11 (1996) 131-135	Journal
1996	Schneider J, Koenig E, Erben U, Seiler U, Schumacher H	Thermionic diffusion model for abrupt HBTs including self-heating inside the multilayer nonplanar device structure	Solid-State Electronics 39 (1996) 377-384	Journal
1996	Boudart B, Gaquiére C, Trassaert S, Théron D, Splingart B, Lipka KM, Kohn E	Small- and large-signal measurements of low-temperature GaAs FETs	Microwave and Optical Technology Letters 12 (1996) 57-59	Journal
1996	Gluche P, Wolter SD, Borst TH, Ebert W, Vescan A, Kohn E	Highly rectifying Au-contacts on diamond-on-silicon substrate	IEEE Electron Device Letters 17 (1996) 270-272	Journal
1996	Wolter SD, Borst TH, Vescan A, Kohn E	The nucleation of highly oriented diamond on silicon via an alternating current substrate bias	Applied Physics Letters 68 (1996) 3558-3560	Journal
1996	Vescan A, Gluche P, Ebert W, Kohn E	Selectively grown Ohmic contacts to d-doped diamond films	Electronics Letters 32 (1996) 1419-1421	Journal
1996	Thomas H, Luo JK, Morgan DV, Lipka KM, Kohn E	Low-temperature grown GaAs insulators for GaAs FET applications	Semiconductor Science and Technology 11 (1996) 1333-1338	Journal
1996	Gluche P, Vescan A, Ebert W, Pitter M, Kohn E	Processing of high temperature stable contacts to single crystal diamond	125th Annual The Minerals, Metals and Materials Society Meeting (TMS), Anaheim, CA, USA, Feb 4-8, 1996, 107-110	Proceedings
1996	Lipka KM, Birk M, Heinecke H, Schneider J, Splingart B, Salmer G, Kohn E	Impact of LT-GaAs conductivity and topography on s-LT-GaAs HFET device performance	Workshop on Non-Stoichiometric GaAs & Related Materials, Santa Barbara, CA, USA, March 6-7, 1996	Proceedings
1996	Theron D, Boudart B, Zaknoune M, Mollot F, Druelle Y, Gerard H, Salmer G, Lipka KM, Westphalen R, Kohn E	s-low temperature GaAs/GaInP FET: device technology and characterisation	Workshop on Non-Stoichiometric GaAs & Related Materials, Santa Barbara, CA, USA, March 6-7, 1996	Proceedings
1996	Wolter SD, Borst TH, Gluche P, Ebert W, Vescan A, Kohn E	Fabrication of highly oriented, smooth diamond films on silicon for electronic devices	Materials Research Society Symposium (MRS), San Francisco, CA, USA, April 8-12, 1996	Proceedings
1996	Strähle S, Long W, Henle B, Mittermeier E, Künzel H, Kohn E	Improved microwave performance of InP based HEMT using a floating gate tetrode arrangement	8th Int. Conf. on Indium Phosphide & Related Materials (IPRM), Schwäbisch-Gmünd, Germany, April 22-25, 1996, 466-469	Proceedings
1996	Kohn E, Ebert W	Advances in Schottky diodes on diamond	20th Wkshp. on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE), Vilnius, Lithuania, May 19-22, 1996, 52-53	Proceedings
1996	Henle B, Strähle S, Chung HYA, Kohn E	Growth and analysis of GaInAs/InP composite channel HFET structures	20th Wkshp. on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE), Vilnius, Lithuania, May 19-22, 1996, 32-33	Proceedings
1996	Aninkevicius V, Henle B, Kohn E, Leitch W, Liberis J, Matulionis A, Sakalas P	Hot-electron microwave noise in InGaAs-based heterostructure	20th Wkshp. on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE), Vilnius, Lithuania, May 19-22, 1996, 34-35	Proceedings
1996	Gluche P, Ebert W, Vescan A, Kohn E	Silicon based Schottky contacts on diamond with high barrier height and thermal stability	3rd International High Temperature Electronics Conference, Albuquerque, NM, USA, June 9-14, 1996, 189-194	Proceedings
1996	König U, Glück M, Gruhle A, Höck G, Kohn E, Bozon B, Nürnbergk D, Ostermann T, Hagelauer R	Design rules for n-Type SiGe hetero FETs	Topical Workshop on Heterostructure Microelectronics (TWHM '96), Sapporo, Japan, Aug 18-21, 1996	Proceedings
1996	Ebert W, Vescan A, Gluche P, Borst T, Kohn E	High-voltage Schottky diode on epitaxial diamond layer	7th European Conf. on Diamond, Diamond-Like & Related Materials (Diamond Films '96), Tours, France, September 1996, 329-332	Proceedings
1996	Opyrchal H, Chin K, Kohn K, Ebert W	The optical characterization of boron-doped MPCVD diamond films	7th European Conf. on Diamond, Diamond-Like & Related Materials (Diamond Films '96), Tours, France, September 1996, 940-943	Proceedings
1996	Lipka KM, Birk M, Hinterberger T, Mishra U, Splingart B, Kohn E, Theron D, Salmer G	Effect of gate-drain electron surface leakage on GaAs FET characteristics	6th European Heterostructure Technology Workshop, Lille, France, Sep 15-17, 1996	Proceedings
1996	Leuner R, Gluche P, Vescan A, Ebert W, Hofer EP, Kohn E	Fabrication of micron scaled resistors using a diamond-on-silicon heteroepitaxial structure	6th European Heterostructure Technology Workshop, Lille, France, Sep 15-17, 1996	Proceedings
1996	B Henle, Reiteman G, Kohn E	InP-based heterostructures for FET application grown at low temperatures	6th European Heterostructure Technology Workshop, Lille, France, Sep 15-17, 1996	Proceedings
1996	Erben U, Ellinger F, Schumacher H	Power amplifiers using SiGe HBTs	6th European Heterostructure Technology Workshop, Lille, France, Sep 15-17, 1996	Proceedings
1996	Theron D, Zaknoune M, Bodart B, DeJeager JC, Salmer G, Lipka KM, Birk M, Heinecke H, Schneider J, Splingart B, Kohn E, Thomas H, Morgan DV	LT-GaAs HFET: a novel concept to overcome the breakdown limitation	23rd International Symposium on Compound Semiconductors (ISCS), St. Petersburg, Russia, Sep 23-27, 1996	Proceedings
1996	Henle B, Reitemann G, Kohn E	Low temperature grown InP-based heterostructures and their device application	23rd International Symposium on Compound Semiconductors (ISCS), St. Petersburg, Russia, Sep 23-27, 1996, 527-530	Proceedings
1996	Schüppen A, Dietrich H, Gerlach S, Höhnemann H, Arndt J, Seller U, Götzfried R, Erben U, Schumacher H	SiGe-technology and components for mobile communication systems	Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), Minneapolis, MN, USA, Sep 29-Oct 1, 1996, 130-133	Proceedings
1996	Vescan A, Ebert W, Gluche P, Kohn E	Preliminary results on pulse doped diamond MESFET structures	EuroDiamond 96, Torino, Italy, Jan 17-20, 1996, 151-158	Proceedings
1995	Lipka KM, Splingart B, Theron D, Luo JK, Salmer G, Thomas H, Morgan DV, Kohn E	LT-GaAs with high breakdown strength at low temperature for power MISFET applications	Journal of Electronic Materials 24 (1995) 913-916	Journal
1995	Arslan, Deniz	Herstellung und Charakterisierung von InP-HEMTs bzgl. deren Gleichstrom- und HF-Eigenschaften	University of Ulm, 1995, Master Thesis	Thesis
1995	Bidenbach, Reiner	Einfluß unterschiedlicher Passivierungen auf das 1/f-Rauschen von Si/SiGe HBTs in Mesatechnologie	University of Ulm, 1995, Student Thesis	Thesis
1995	Birk, Martin	Rechnergestützte hochauflösende Zeitbereichsreflektometrie	University of Ulm, 1995, Student Thesis	Thesis
1995	Daumiller, Ingo	Herstellung und Charakterisierung von pseudomorphen GaAs HEMT's mit In(1-x)Ga(x)P Barriereschicht und In(1-y)Ga(y)As Kanal	University of Ulm, 1995, Student Thesis	Thesis
1995	Frohnmüller, Till	1/f Rauschmeßplatz für Elektromigration auf dem Wafer	University of Ulm, 1995, Master Thesis	Thesis
1995	Gässler, Christoph	Einfluß der Probenstruktur auf die Hallmeßmethode nach van der Pauw	University of Ulm, 1995, Student Thesis	Thesis
1995	Haas, Arndt	Optische Steuerung von GaAs MESFET-Schaltungen	University of Ulm, 1995, Student Thesis	Thesis
1995	Heinzmann, Jürgen	Optimierung ohm'scher Kontakte in neuartigen GaAs-MISFET's	University of Ulm, 1995, Student Thesis	Thesis
1995	Hepp, Christoph	Beiträge zur automatischen Parameterextraktion an HBTs	University of Ulm, 1995, Student Thesis	Thesis
1995	Hofer, Bernhard	Herstellung und Charakterisierung von doppelseitig dotierten pseudomorphen HEMTs mit verschiedenen MOCVD-gewachsenen Bufferstrukturen	University of Ulm, 1995, Student Thesis	Thesis
1995	Lüthin, Stefan	Simulation von Si/SiGe Hetero-Feldeffekttransistorstrukturen	University of Ulm, 1995, Master Thesis	Thesis
1995	Metzger, Michael	Photoluminescence Study of MOCVD grown GaSb, Te-doped GaSb, AlGaSb, InGaSb and MBE grown AlGaAs/GaAs-QW structures	University of Ulm, 1995, Student Thesis	Thesis
1995	Paul, Michael	Microcontrollergesteuerter Tonrufwiederholer	University of Ulm, 1995, Student Thesis	Thesis
1995	Pfau, Jürgen	Optimierung des Gate-Rezess bei InGaAs/AlInAs/InP-HEMTs bezüglich der Bauelementeigenschaften	University of Ulm, 1995, Student Thesis	Thesis
1995	Reitemann, Günter	Entwicklung eines Programms zur Bestimmung der Kleinsignalersatzschaltgrößen von HEMTs unter Verwendung zusätzlicher Messungen	University of Ulm, 1995, Student Thesis	Thesis
1995	Schnitzer, Reiner	Mischerschaltungen mit Si/SiGe-Heterostruktur-Bipolartransistoren bei 10 GHz	University of Ulm, 1995, Master Thesis	Thesis
1995	Thalmaier, Carmen	Herstellung und Charakterisierung aluminiumfreier HEMTs auf InP	University of Ulm, 1995, Student Thesis	Thesis
1995	Wahl, Marcus Michael	Aufbau und Charakterisierung von Mikrowellen-Leistungsverstärkern mit Si/SiGe-Heterostrukturbipolartransistoren	University of Ulm, 1995, Master Thesis	Thesis
1995	Windmüller, Andreas	Entwurf eines Operationsverstärkers mit Si/SiGe-HBTs	University of Ulm, 1995, Master Thesis	Thesis
1995	Zips, Michael	Electrical and optical Characteristics of ITO/p-InP Solar Cells	University of Ulm, 1995, Student Thesis	Thesis
1995	Geiger D, Dickmann J, Wölk C, Kohn E	Recess dependent breakdown behavior of GaAs-HFET's	IEEE Electron Device Letters 16 (1995) 30-32	Journal
1995	Thayne I, Elgaid K, Taylor M, Holland M, Fairbairn S, Cameron N, Beaumont S, Belle G	Low-frequency noise of selectively dry-etch gate-recessed GaAs MESFETs	Electronics Letters 31 (1995) 324-326	Journal
1995	Lipka KM, Splingart B, Westphalen R, Kohn E	High aspect ratio LT-GaAs MISFET structure with d-doped channel	Non-Stoichiometric GaAs and Related Materials, New Orleans, LA, USA, February 1995	Proceedings
1995	Geiger D, Mittermeier E, Dickmann J, Geng C, Winterhof R, Scholz F, Kohn E	InGaP/InGaAs HFET with high current density and high cut-off frequencies	IEEE Electron Device Letters 16 (1995) 259-261	Journal
1995	Geiger D, Mittermeier E, Dickmann J, Geng C, Scholz F, Kohn E	Noise in channel doped GaInP/InGaAs HFET devices	Electronics Letters 31 (1995) 1295-1297	Journal
1995	Koenig E, Seiler U, Schneider J, Erben U, Schumacher H	Impact of thermal distribution and emitter length on the performance of microwave heterojunction bipolar transistors	Solid-State Electronics 38 (1995) 775-779	Journal
1995	Erben U, Wahl M, Schüppen A, Schumacher H	Class-A SiGe HBT power amplifiers at C-band frequencies	IEEE Microwave and Guided Wave Letters 5 (1995) 435-436	Journal
1995	Westphalen R, Lipka KM, Splingart B, Kohn E	Ohmic contacts to LT-GaAs passivated active layers on GaAs	Non-Stoichiometric GaAs and Related Materials, New Orleans, LA, USA, February 1995	Proceedings
1995	Strähle S, Henle B, Lee L, Künzel H, Kohn E	Microwave performance of InP-based HEMTs for low voltage application fabricated by optical lithography	7th International Conference on Indium Phosphide and Related Materials (IPRM), Sapporo, Japan, May 1995	Proceedings
1995	Boudart B, Delos E, Ducroquet F, Gerard H, Theron D, Lipka KM, Splingart B, Kohn E	Transconductance dispersion in LT GaAs MISFET's	WOCSDICE 95, Stockholm, Sweden, May 1995	Proceedings
1995	Erben U, Schumacher H	Design considerations for low-noise applications of SiGe HBTs	WOCSDICE 95, Stockholm, Sweden, May 1995	Proceedings
1995	Geiger D, Mittermeier E, Dickmann J, Geng C, Winterhoff R, Scholz F, Kohn E	Noise in channel doped GaInP/InGaAs-HFET-devices	WOCSDICE 95, Stockholm, Sweden, May 1995	Proceedings
1995	Leitch WE, Henle B, Kohn E	Luminescence and magnetotransport studies of InP-based HEMT structures	WOCSDICE 95, Stockholm, Sweden, May 1995	Proceedings
1995	Vescan A, Ebert W, Borst TH, Pitter M, Hugenschmidt M, Behm RJ, Gerster J, Sauer R, Kohn E	Silicon based contacts on epitaxial diamond films	4th International Symposium on Diamond Material, Reno, NV, USA, May 1995	Proceedings
1995	Westphalen R, Heinzmann J, Lipka KM, Splingart B, Kohn E	Low resistive through-alloyed ohmic contacts to LT-GaAs passivated active layers in the presence of an As-diffusion barrier	37th Electronics Materials Conference (EMC), Charlottesville, VA, USA, June 1995	Proceedings
1995	Lipka KM	HFET structures with low temperature GaAs surface layers for power application	Naval Research Microwace Technology Branch Seminar, Washington DC, USA, June 1995	Proceedings
1995	Lipka KM, Splingart B, Westphalen R, Kohn E, Theron D, Boudart B, Salmer G, Pond LL, Weitzel CE	Low temperature grown GaAs lossy dielectric heterostructure FET	15th IEEE / Cornell Conference, Ithaca, NY, USA, August 1995	Proceedings
1995	Lee L, Long W, Strähle S, Geiger D, Henle B, Künzel H, Mittermeier E, Erben U, Spitzberg U, Kohn E	Dual-gate HFET with closely spaced electrodes on InP	15th IEEE / Cornell Conference, Ithaca, NY, USA, August 1995	Proceedings
1995	Schneider J, Erben U, Schumacher H	Rigorous treatment of the electro-thermal behaviour of multi-finger microwave power heterojunction bipolar transistors	15th IEEE / Cornell Conference, Ithaca, NY, USA, August 1995	Proceedings
1995	Vescan A, Ebert W, Borst TH, Kohn E	Electrical characterisation of diamond resistors etched by RIE	Diamond Films '95, Barcelona, Spain, September 1995	Proceedings
1995	Lipka KM, Birk M, Heinecke H, Schneider J, Splingart B, Westphalen R, Kohn E	Recent developments in HFET devices employing s-LT-GaAs	5th European Heterostructure Technology Workshop, Cardiff, UK, September 1995	Proceedings
1995	Schnitzer R, Erben U, Schumacher H	Application of Si/SiGe HBTs in mixers at X-band frequencies	5th European Heterostructure Technology Workshop, Cardiff, UK, September 1995	Proceedings
1995	Leitch WE, Henle BU, Kohn E	Photoluminescence and modelling of InAlAs-InGaAs channel-doped HFET material	5th European Heterostructure Technology Workshop, Cardiff, UK, September 1995	Proceedings
1995	Patrick W, Klepser BUH, Schefer M, Bergamaschi C, Leitch WE	Comparison of the characteristics of 0.2 µm InP HEMTs fabricated on "nearly identical" wafers	5th European Heterostructure Technology Workshop, Cardiff, UK, September 1995	Proceedings
1995	Gruhle A, Schumacher H, Erben U, Kibbel H, König U^	Low power consumption DC-18 GHz internally matched amplifier using Si/SiGe HBTs	25th European Solid State Device Research Conf (ESSDERC), The Hague, The Netherlands, September 1995	Proceedings
1995	Schumacher H, Birk M, Trasser A	On-wafer time-domain characterization of microwave devices	25th European Solid State Device Research Conf (ESSDERC), The Hague, The Netherlands, September 1995	Proceedings
1995	Schumacher H, Gruhle A, Erben U, Kibbel H, König U	A 3V supply voltage, DC-18 GHz SiGe HBT wideband amplifier	1995 Bipolar/BiCMOS Circuits and Technology Meeting, Minneapolis, MN, USA, October 1995	Proceedings
1995	Kohn E, Lipka KM	Low temperature grown GaAs materials and devices: Present status and trends	International Symposium in Signals, Systems and Electronics (ISSSE), San Francisco, CA, USA, October 1995	Proceedings
1995	Leitch WE, Henle B, Kohn E	Konzept zur zerstörungsfreien Bestimmung der 2-DEG-Dichte technischer InP-HFET-Strukturen	10. Treffen des Arbeitskreises Epitaxie von III/V-Halbleitern, Jülich, Germany, December 1995	Proceedings
1995	Gruhle A, Schüppen A, König U, Erben U, Schumacher H	Monolithic 26GHz and 40GHz VCOs with SiGe heterojunction bipolar transistors	International Electron Devices Meeting (IEDM), Washington DC, USA, December 1995	Proceedings
1995	Schüppen A, Erben U, Gruhle A, Kibbel H, Schumacher H, König U	Enhanced SiGe heterojunction bipolar transistors with 160 GHz fmax	International Electron Devices Meeting (IEDM), Washington DC, USA, December 1995	Proceedings
1995	Künzel H, Böttcher J, Hase A, Strähle S, Kohn E	Optimized molecular beam epitaxial growth temperature profile for high-performance AlInAs/GaInAs single quantum well high electron mobility transistor structures	Journal of Crystal Growth No. 150 (1995) 1241-1245	Journal
1994	Arslan, Deniz	Entwicklung eines selektiven Ätzprozesses bzgl. InGaAs, InAlAs und InP	University of Ulm, 1994, Student Thesis	Thesis
1994	Gluche, Peter Bodo	Sperrfreie Kontakte auf Galliumarsenid und Diamant	University of Ulm, 1994, Student Thesis	Thesis
1994	Glück, Markus	Si/SiGe-Heterostrukturfeldeffekttransistoren (SiGe-MODFET's) mit sub-um-Gates	University of Ulm, 1994, Master Thesis	Thesis
1994	Götzfried, Rainer	10,3 GHz VCO mit Si-SiGe HBT	University of Ulm, 1994, Student Thesis	Thesis
1994	Heinrich, Jochen	Einfluß der Passivierung auf die elektrische Gleichstromkennlinie von SiGe-Mesadioden	University of Ulm, 1994, Student Thesis	Thesis
1994	Hilsenbeck, Jochen	Optimierung ohmscher Kontakte für InGaAs/InAlAs/InP-HEMT's	University of Ulm, 1994, Student Thesis	Thesis
1994	Meinzer, Harald	Leckstromuntersuchungen an MOCVD gewachsenen FET-Strukturen	University of Ulm, 1994, Student Thesis	Thesis
1994	Menikheim, Till	Elektrische Charakterisierung von dotierten polykristallinen Diamantschichten	University of Ulm, 1994, Master Thesis	Thesis
1994	Metzger, Heiko	Entwurf und Realisierung rauscharmer Verstärker mit Si/SiGe-Heterostruktur-Bipolartransistoren für f=1.7 GHz	University of Ulm, 1994, Master Thesis	Thesis
1994	Schnitzer, Reiner	Entwurf eines rauscharmen 900 MHz-Verstärkers mit SiGe-HBTs	University of Ulm, 1994, Student Thesis	Thesis
1994	Wahl, Marcus	Prozeßtechnologie und DC-Charakterisierung von GaAs-Gunn-Elementen	University of Ulm, 1994, Student Thesis	Thesis
1994	Ebert W, Vescan A, Borst TH, Weis E, Kohn E	Epitaxial diamond Schottky diode on p+-substrate	SPIE Conference, Los Angeles, CA, USA, January 1994	Proceedings
1994	Erben U, Gruhle A, Schüppen A, Kibbel H, Koenig U	Dynamic characterisation if Si/SiGe power HBTs	Electronics Letters 30 (1994) 525-527	Journal
1994	Strähle S, Geiger D, Henle B, Kohn E	Drift region characteristics of InP-based HEMT devices evaluated by a simple drift region model	6th International Conference on Indium Phosphide and Related Materials, Santa Barbara, CA, March 1994	Proceedings
1994	Schumacher H, Erben U, Gruhle A	Low-noise performance of SiGe heterojunction bipolar transistors	1994 IEEE MTT-S International Microwave Symposium, San Diego, CA, USA, May 1994	Proceedings
1994	Geiger D, Dickmann J, Wölk C, Kohn E	Influence of the recess configuration of GaAs-HFET's on feed back and breakdown characteristics	WOCSDICE 94, Kinsale, Ireland, May 1994	Proceedings
1994	Schüppen A, Gruhle A, Erben U, Kibbel H, König U	90 GHz f_max SiGe-HBTs	Device Research Conference, Boulder, CO, USA, June 1994	Proceedings
1994	Lipka KM, Splingart B, Theron D, Luo JK, Salmer G, Thomas H, Kohn E	LT-GaAs with high breakdown strength at low temperature for power MISFET applications	36th Electronic Materials Conference, Boulder, CO, USA, June 1994	Proceedings
1994	Schüppen S, Gruhle A, Kibbel H, Erben U, König U	SiGe-HBTs with HIGH f_T at moderate current densities	Electronics Letters 30 (1994) 1187-1188	Journal
1994	Ebert W, Vescan A, Borst TH, Kohn E	High current p/p+-diamond Schottky diode	IEEE Electron Device Letters 15 (1994) 289-291	Journal
1994	Geiger D, Mittermeier E, Dickmann J, Geng C, Winterhoff R, Scholz F, Kohn E	GaInP barrier layers in PM-HFET-devices	4th European Heterostructure Technology Workshop, Günzburg, Germany, September 1994	Proceedings
1994	Westphalen R, Schiefele M, Hurich M, Schneider J, Lipka KM, Heinecke H, Kohn E	Characterization of thin Lt-GaAs layers for FET-applications	4th European Heterostructure Technology Workshop, Günzburg, Germany, September 1994	Proceedings
1994	Vescan A, Ebert W, Borst T, Kohn E	A silicon diode on epitaxial diamond	4th European Heterostructure Technology Workshop, Günzburg, Germany, September 1994	Proceedings
1994	Leitch WE, Strähle S, Henle B, Morton CG, Wood J, Kohn E	Charge in spike-doped-QW structures: Correlation between novel model and experiment	4th European Heterostructure Technology Workshop, Günzburg, Germany, September 1994	Proceedings
1994	Lipka KM, Splingart B, Westphalen R, Kohn E	LT-GaAs power MISFETs	4th European Heterostructure Technology Workshop, Günzburg, Germany, September 1994	Proceedings
1994	Erben U, Schüppen A, Kibbel H, Schumacher H	Optimization of Si/SiGe power HBTs	4th European Heterostructure Technology Workshop, Günzburg, Germany, September 1994	Proceedings
1994	Schneider J, Schumacher H	Numerical investigation of the thermo-electrical behaviour of AlGaAs/GaAs heterojunction bipolar transistors	4th European Heterostructure Technology Workshop, Günzburg, Germany, September 1994	Proceedings
1994	Westphalen R, Lipka KM, Schneider J, Kohn E	Heterostructure insulated-gate-FET with improved gate barrier characteristics	21st International Symposium on Compound Semiconductors, San Diego, CA, USA, September 1994	Proceedings
1994	Mittermeier E, Geiger D, Strähle S, Kohn E	Fabrication of dual-gate FET structures with short gate length and nm spacing	International Conference Micro-and Nano-Engineering '94, Davos, Switzerland, September 1994	Proceedings
1994	Leitch WE	Luminescence characterization of heterojunction FETs	1st European Conference for HCM Fellows, Rostock, Germany, October 1994	Proceedings
1994	Strähle S, Henle B, Kohn E	Low voltage characteristics of InGaAs/InP composite channel HEMT structure fabricated by optical lithography	Electronics Letters 30 (1994) 1989-1990	Journal
1994	Erben U, Schumacher H	Optimization of SiGe HBTs for low-noise applications	IEEE/MTT Workshop on Silicon Based High Frequency Devices and Circuits, Günzburg, Germany, November 1994	Proceedings
1994	Schüppen A, Gruhle A, Erben U, Kibbel H, König U	Collector optimization of SiGe-HBTs	IEEE/MTT Workshop on Silicon Based High Frequency Devices and Circuits, Günzburg, Germany, November 1994	Proceedings
1994	Strähle S, Mittermeier E, Geiger D, Kohn E	A closely spaced sub-quarter micron dual-gate HEMT structure	High Performance Electron Devices for Microwave and Optoelectronic Applications (EDMO), London, UK, November 1994	Proceedings
1994	Ebert W, Vescan A, Borst TH, Kohn E	Epitaxial diamond Schottky barrier diode with On/Off current ratios in excess of 107 at high temperature	International Electron Devices Meeting, San Francisco, CA, USA, December 1994	Proceedings
1994	Schüppen A, Gruhle A, Erben U, Kibbel H, König U	Multi emitter finger SiGe-HBTs with fmax up to 120 GHz	International Electron Devices Meeting, San Francisco, CA, USA, December 1994	Proceedings
1994	Henle B, Strähle S, Leitch WE, Kohn E	Wachstum von Stufenkanälen für HEMTs mit einer Festquellen-MBE	9. Treffen des Arbeitskreises Epitaxie von III/V-Halbleitern, Duisburg, Germany, December 1994	Proceedings
1993	Gruhle A, Kibbel H, Erben U, Kasper E	91GHz SiGe HBTs grown by MBE	Electronics Letters 29 (1993) 415-417	Journal
1993	Schumacher H, Erben U	Heterojunction bipolar transistors for noise-critical applications	State-of-the-Art-Program on Compound Semiconductors (SOTAPOCS), Honolulu, HA, USA, May 1993	Proceedings
1993	Glück, Markus	Oxidation von Si und SiGe bei niedrigem Temperatur/Zeit-Budget (RTO)	University of Ulm, 1993, Student Thesis	Thesis
1993	Lares, Roland	Hör-Sprechgarnitur für ein Sprechfunkgerät mit Schallaufnahme im Gehörgang	University of Ulm, 1993, Student Thesis	Thesis
1993	Meola, Renato	Mikrowellen-Filterstrukturen in Mehrlagentechnik	University of Ulm, 1993, Student Thesis	Thesis
1993	Schikorr, Michael	Zweistufiger Mikrowellenverstärker für 10.3 GHz mit Verwendung von Si/SiGe-HBTs	University of Ulm, 1993, Student Thesis	Thesis
1993	Suckel, Henning	Temperatursteuerbarer Probenhalter für einen Waferprobenhalter	University of Ulm, 1993, Student Thesis	Thesis
1993	Zhang X, Strähle S, Mittermeier E, Kohn E.	Novel optical high resolution three-layer resist process	State of the Art Program on Compound Semiconductors (SOTAPOCS XVIII), Honolulu, HA, USA, May 1993	Proceedings
1993	Kohn E	On the drain breakdown limit of GaAs-based FET structure	17th Workshop on Compound Semiconductor Devices and Integrated Circuits, Parma, Italy, June 1993	Proceedings
1993	Lipka KM, Splingart B, Zhang X, Poese M, Panzlaff K, Kohn E	Interfacial barrier characteristics of LT-GaAs on low doped GaAs layers	E-MRS Spring Meeting, Strasbourg, France, May 1993	Proceedings
1993	Lipka KM, Splingart B, Kohn E	High I-V product LT-GaAs MISFET structure	Electronics Letters 29 (1993) 1170-1172	Journal
1993	Lipka KM, Splingart B, Erben U, Kohn E	LT-GaAs-MIS-diode characteristics and equivalent circuit model	14th IEEE/Cornell Conference, Ithaca, NY, USA, August 1993	Proceedings
1993	Strähle S, Henle B, Mittermeier E, Erben U, Rees PK, Kohn E	Two layer stepped-QW channel HFET's on InP-substrate	14th IEEE/Cornell Conference, Ithaca, NY, USA, August 1993	Proceedings
1993	Kohn E, Strähle S, Geiger D, Erben U	High field drift domains in GaAs and InP based heterostructure field effect devices	14th IEEE/Cornell Conference, Ithaca, NY, USA, August 1993	Proceedings
1993	Schneider J, Schumacher H, Erben U	Thermal management in strongly non-planar microwave HBTs	14th IEEE/Cornell Conference, Ithaca, NY, USA, August 1993	Proceedings
1993	Kohn E, Strähle S, Erben U	A general drift region model for III-V HFET devices	14th IEEE/Cornell Conference, Ithaca, NY, USA, August 1993	Proceedings
1993	Erben U, Schumacher H, Seiler U, Koenig E	Enhanced static performance of AlGaAs/GaAs HBTs by flouride surface treatment	Electronics Letters 29 (1993) 1489-1491	Journal
1993	Lipka KM, Splingart B, Erben U, Kohn E	LT-GaAs MISFET structure for power application	20th International Symposium on GaAs and Related Compounds, Freiburg, Germany, September 1993	Proceedings
1993	Landgraf B, Brugger H, Trasser A, Schumacher H	Analysis of integrated resonant tunneling devices for millimeter-wave detector application	20th International Symposium on GaAs and Related Compounds, Freiburg, Germany, September 1993	Proceedings
1993	Ebert W, Vescan A, Kohn E	General diamond Schottky barrier diode model from locus diagram analysis	Diamond Films 93, Albufeira, Algarve, Portugal, September 1993	Proceedings
1993	Vescan A, Lipka KM, Kohn E	Side wall metallization using lift-off process	3rd European Heterostructure Technology Workshop, Lille, France, September 1993	Proceedings
1993	Erben U	Thermal behaviour of HBT small-signal parameters	High Speed Bipolar Devices Workshop, Ulm, Germany, October 1993	Proceedings
1993	Schneider J, Schumacher H	Thermal design studies of a nonplanar multilayer Al0.3Ga0.7As/GaAs HBT using a finite element approach	IEEE/MTT Workshop on High-Speed Bipolar Devices Workshop, Ulm, Germany, October 1993	Proceedings
1993	Schumacher H	InP-based devices for optoelectronic integration	Workshop on Heterostructure Epitaxy and Devices, Smolenice, Slovakia, October 1993	Proceedings
1993	Splingart B, Lipka KM, Kohn E	The effect of interfacial diffusion barriers on the channel stability of LT-GaAs MIS structures	MBE Workshop, Darmstadt, Germany, October 1993	Proceedings
1991	Soole, Julian B. D. and Schumacher, Hermann	InGaAs Metal-Semiconductor-Metal Photodetectors for Long Wavelength Optical Communications	IEEE Journal of Quantum Electronics 27 (1991) 737-752	Journal
1987	Schumacher H, Hayes JR, Bhat R, Koza M	OMCVD Grown InP/InGaAs Heterojunction Bipolar Transistors	Proc International Electron Devices Meeting (IEDM) 1987, pp 852-853	Proceedings